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Onsemi NTBG022N120M3S | Demoboard EVB for 1200 V SiC MOSFET M3S in D2PAK-7LD
Evaluation Board for 1200 V SiC MOSFET M3S in D2PAK-7LD showing Benefit of IMS PCB
Details
| Topologie | Sonstige Topologie |
| Eingangsspannung | 800 V |
Beschreibung
This evaluation board supports evaluation of onsemi’s NTBG022N120M3S 22 m 1200 V SiC MOSFET in D2PAK−7LD working together with NCD57084 isolated gate drivers using a printed circuit board using IMS. These products are used in energyinfrastructure applications, such as PV inverters, UPS or EV chargers to improve efficiency and power density compared with IGBT or superjunction MOSFET solutions. This manual describes the board function, board layout and comparison of the IMS PCB thermal properties with the thermal properties of a standard FR4 board. Itincludes details of layout, schematics, and bill of materials.The evaluation board contains four SiC MOSFETs soldered onto an IMS PCB in a full−bridge topology. The gate driver stage consists of four NCD57084 high current galvanically isolated gate drivers. Thedriver provides 3 kV insulation between primary and secondary side. The gate drive voltage is supplied through an isolated DC/DC voltage source using the NCV3064.The evaluation board can be connected to an external controllerproviding PWM inputs and handling fault signals. Use of an externalsensor for over current and over voltage protection is recommended.
Eigenschaften
- Low Thermal Resistance IMS PCB
- 4 Isolated Gate Drivers with 3 kV Insulation -On Board NTC for IMS Temperature Sensing
- Low Inductance PCB Layout
- Modular Pinout allows Evaluation of Multiple Topologies
Typische Anwendungen
- Uninterruptible Power Supplies (UPS), Switch Mode Power Supplies (SMPS)
- Solar Inverters, Energy Storage Systems
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | W (mm) | Fl (mm) | Vin (V) | VOut1 (V) | VOut2 (V) | VOut3 (V) | Vaux (V) | PO (W) | CWW 1 (pF) | L (µH) | ISAT (A) | fswitch (kHz) | n | IC-Referenz | Pins (Value) (pcs) | Raster (mm) | Version | Gender | Typ | Montageart | L (mm) | H (mm) | IR (A) | Arbeitsspannung (V (AC)) | Kontaktwiderstand (mΩ) | Tol. R | Verpackung | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 885012206079 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 50 V(DC) | 220 pF | ±10% | 50 | 0603 | -55 °C up to +125 °C | 2.5 | 10 GΩ | X7R Klasse II | 0.8 | 0.4 | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | 1.6 | 0.8 | – | – | – | – | 7" Tape & Reel | ||
 | 61201421621 | SPEC | – | 7 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WR-BHD 2.54 mm Male Box Header | – | – | – | – | -40 °C up to +105 °C | – | 1000 MΩ | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | 14 | 2.54 | Low Profile | Männlich | Gerade | THT | 25.44 | – | 3 | 250 | 20 | max. | Tray | |
 | 750319282 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-AGDT Auxiliary Gate Drive Transformer | – | – | – | EP7 | -40 °C up to +130 °C | – | – | – | 10.95 | – | 6 - 18 | 20 | 5 | 5 | 5 | 1.5 | 6.4 | 42 | 1.2 | 150 | 1.56:3.89:1:1:1 | NCV(P)3064 | – | – | Flyback | – | – | – | 11.3 | 11.94 | – | – | – | – | – |
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
| 885012206079 | SPEC | |
| 61201421621 | SPEC | – |
| 750319282 | SPEC |
| Muster |
|---|
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | W (mm) | Fl (mm) | Vin (V) | VOut1 (V) | VOut2 (V) | VOut3 (V) | Vaux (V) | PO (W) | CWW 1 (pF) | L (µH) | ISAT (A) | fswitch (kHz) | n | IC-Referenz | Pins (Value) (pcs) | Raster (mm) | Version | Gender | Typ | Montageart | L (mm) | H (mm) | IR (A) | Arbeitsspannung (V (AC)) | Kontaktwiderstand (mΩ) | Tol. R | Verpackung | Muster |
|---|