IC-Hersteller ROHM
IC-Hersteller (99)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (27)
- Ablic (23)
- Advanced Power (4)
- Allegro Microsystems (84)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (163)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (47)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (238)
- Divimath (8)
- Elmos AG (1)
- EPC (99)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (7)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- Ikanos (3)
- IKON (1)
- Indie Semiconductor (5)
- Innovision Semiconductor Inc (2)
- Intel (80)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (2)
- Kinetic Technology (10)
- Lattice semiconductor Corporation (19)
- Littelfuse (1)
- M3 Technology (M3Tek) (7)
- Macnica (16)
- MaxLinear (175)
- MikroE (8)
- MindCet (2)
- Monolithic Power Systems (931)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (32)
- Nisshinbo Micro Device Inc. (10)
- Nordic Semiconductor (1)
- Novosense Micro (1)
- NXP (314)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (102)
- Pulsiv (19)
- Qorvo (87)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (296)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (90)
- SG-Micro (33)
- Silanna Semiconductor (8)
- Silergy Corporation (29)
- Silicon Laboratory Inc. (104)
- Silicontent Technology (57)
- Silvertel (56)
- Skycore Semiconductors (1)
- Skyworks (31)
- Southchip (8)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (18)
- Wise Integration (1)
- Wolfspeed (8)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Details
| Topologie | Leistungsfaktor-Korrektur |
| Eingangsspannung | 90-264 V |
| Schaltfrequenz | 2000 kHz |
| Ausgang 1 | 415 V / 0.6 A |
| IC-Revision | 001 |
Beschreibung
This is the product guarantees long time support in industrial market. BM3G007MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
Eigenschaften
- Nano Cap™ Integrated Output Selectable 5V LDO
- Long Time Support Product for Industrial Applications
- Wide Operating Range for VDD Pin Voltage
- Wide Operating Range for IN Pin Voltage
- Low VDD Quiescent and Operating Current
- Low Propagation Delay
- High dv/dt Immunity
- Adjustable Gate Drive Strength
- Power Good Signal Output
- VDD UVLO Protection
- Thermal Shutdown Protection
Typische Anwendungen
- Industrial Equipment
- Power Supplies with High Power Density, High Efficiency Demand, or Bridge Topology such as Totem-pole PFC, LLC Power Supply, Adaptor, etc.
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | Pins (Value) (pcs) | Anwendung | PCB/Kabel/Panel | Modularity | Typ | Wire Section | C | Sicherheitsklasse | dV/dt (V/µs) | DF @ 1 kHz (%) | RISO | Betriebstemperatur | Raster (mm) | Verpackung | Tol. C | Bauform | Betriebstemperatur | DF (%) | Keramiktyp | Fl (mm) | Endurance (h) | IRIPPLE (mA) | ILeak (µA) | Ø D (mm) | IR (A) | L (mH) | RDC max. (mΩ) | VR (V (AC)) | VT (V (AC)) | Material | L (mm) | W (mm) | H (mm) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 691137910003 | SPEC | – | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WR-TBL Serie 1379 - 7.50 mm horizontaler Kabeleingang SMT Pressure Clamp WR-TBL | 3 | Pressure Clamp | PCB | Nein | Horizontal | 30 to 12 (AWG) 0.05 to 3.31 (mm²) | – | – | – | – | – | -30 °C bis zu +120 °C | 7.5 | Karton | – | – | -30 °C up to +120 °C | – | – | – | – | – | – | – | 24 | – | – | – | – | – | 22.5 | – | – | THT | |
 | 7448040435 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-CMBNC Stromkompensierte Netzdrossel Nanokristallin | 4 | – | – | – | – | – | – | – | – | – | – | – | – | – | – | L | -55 °C up to +125 °C | – | – | – | – | – | – | – | 3.5 | 35 | 80 | 300 | 2100 | Nanokristallin | 27.5 | 18 | 32 | THT | ||
 | 890334023023CS | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-FTXX Folienkondensatoren | – | Across the mains | – | – | – | – | 100 nF | X2 | 300 | 0.1 | 30 GΩ | -40 °C bis zu +105 °C | 10 | Karton | ±10% | Pitch 10 mm | -40 °C up to +105 °C | – | – | – | – | – | – | – | – | – | – | 310 | – | – | 13 | 7 | 13 | Boxed THT | ||
| 890334025039CS | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-FTXX Folienkondensatoren | – | Across the mains | – | – | – | – | 470 nF | X2 | 220 | 0.1 | 21.28 GΩ | -40 °C bis zu +105 °C | 15 | Karton | ±10% | Pitch 15 mm | -40 °C up to +105 °C | – | – | – | – | – | – | – | – | – | – | 310 | – | – | 18 | 8 | 14 | Boxed THT | ||
 | 7447013 | SPEC | – | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-FI Funkentstördrossel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | -40 °C up to +105 °C | – | – | – | – | – | – | – | 4.6 | 0.09 | 40 | – | – | – | 18.5 | 10.5 | – | THT | |
 | 860020672012 | SPEC | 7 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-ATG5 Aluminium-Elektrolytkondensatoren | – | – | – | – | – | – | 33 µF | – | – | – | – | -40 °C bis zu +105 °C | 2 | Ammopack | ±20% | – | – | 10 | – | – | 2000 | 75 | 16.5 | 5 | – | – | – | 50 | – | – | 11 | – | – | – | ||
 | 861021486029 | SPEC | 7 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-AIG5 Aluminium-Elektrolytkondensatoren | – | – | – | – | – | – | 220 µF | – | – | – | – | -25 °C bis zu +105 °C | 10 | Tray | ±20% | 35.0 x 37.0 | -25 °C up to +105 °C | 20 | – | – | 2000 | 1240 | 1980 | 35 | – | – | – | 450 | – | – | 37 | – | – | – | ||
 | 885012206089 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 50 V(DC) | – | – | – | – | – | – | 10 nF | – | – | – | 10 GΩ | – | – | 7" Tape & Reel | ±10% | 0603 | -55 °C up to +125 °C | 2.5 | X7R Klasse II | 0.4 | – | – | – | – | – | – | – | 50 | – | – | 1.6 | 0.8 | 0.8 | – | ||
| 750345199 | SPEC | – | – | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Power Inductor | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – |
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
| 691137910003 | SPEC | – |
| 7448040435 | SPEC | |
| 890334023023CS | SPEC | |
| 890334025039CS | SPEC | |
| 7447013 | SPEC | – |
| 860020672012 | SPEC | |
| 861021486029 | SPEC | |
| 885012206089 | SPEC | |
| 750345199 | SPEC | – |
| Muster |
|---|
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | Pins (Value) (pcs) | Anwendung | PCB/Kabel/Panel | Modularity | Typ | Wire Section | C | Sicherheitsklasse | dV/dt (V/µs) | DF @ 1 kHz (%) | RISO | Betriebstemperatur | Raster (mm) | Verpackung | Tol. C | Bauform | Betriebstemperatur | DF (%) | Keramiktyp | Fl (mm) | Endurance (h) | IRIPPLE (mA) | ILeak (µA) | Ø D (mm) | IR (A) | L (mH) | RDC max. (mΩ) | VR (V (AC)) | VT (V (AC)) | Material | L (mm) | W (mm) | H (mm) | Montageart | Muster |
|---|