IC manufacturers ROHM

IC manufacturers (99)

ROHM BM3G007MUV | Demoboard BM3G007MUV-EVK-002

650V GaN HEMT Power Stage

Overview

TopologyPower Factor Correction
Input voltage90-264 V
Switching frequency2000 kHz
Output 1415 V / 0.6 A
IC revision001

Description

This is the product guarantees long time support in industrial market. BM3G007MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.

Features

  • Nano Cap™ Integrated Output Selectable 5V LDO
  • Long Time Support Product for Industrial Applications
  • Wide Operating Range for VDD Pin Voltage
  • Wide Operating Range for IN Pin Voltage
  • Low VDD Quiescent and Operating Current
  • Low Propagation Delay
  • High dv/dt Immunity
  • Adjustable Gate Drive Strength
  • Power Good Signal Output
  • VDD UVLO Protection
  • Thermal Shutdown Protection

Typical applications

  • Industrial Equipment
  • Power Supplies with High Power Density, High Efficiency Demand, or Bridge Topology such as Totem-pole PFC, LLC Power Supply, Adaptor, etc.

Products

Order Code Data­sheet Simu­lation Downloads Status Product seriesPins (Value)
(pcs)
ApplicationPCB/Cable/PanelModularityTypeWire SectionCSafety ClassdV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOOperating TemperaturePitch
(mm)
PackagingTol. CSizeOperating TemperatureDF
(%)
Ceramic TypeFl
(mm)
Endurance
(h)
IRIPPLE
(mA)
ILeak
(µA)
Ø D
(mm)
IR
(A)
L
(mH)
RDC max.
(mΩ)
VR
(V (AC))
VT
(V (AC))
MaterialL
(mm)
W
(mm)
H
(mm)
Mount Samples
691137910003SPEC
6 files Active i| Production is active. Expected lifetime: >10 years.WR-TBL Series 1379 - Wire Protector 7.50mm pitch - Horizontal cable entry - THT 3 Pressure Clamp PCB No Horizontal 30 to 12 (AWG) 0.05 to 3.31 (mm²) -30 °C up to +120 °C 7.5 Box -30 °C up to +120 °C 24 22.5 THT
7448040435SPEC
9 files Active i| Production is active. Expected lifetime: >10 years.WE-CMBNC Common Mode Power Line Choke Nanocrystalline 4 L -55 °C up to +125 °C 3.5 35 80 300 2100 Nanocrystalline 27.5 18 32 THT
890334023023CSSPEC
8 files Active i| Production is active. Expected lifetime: >10 years.WCAP-FTXX Film Capacitors Across the mains100 nF X2 300 0.130 GΩ -40 °C up to +105 °C 10 Carton ±10% Pitch 10 mm -40 °C up to +105 °C 310 13 7 13 Boxed THT
890334025039CSSPEC
8 files Active i| Production is active. Expected lifetime: >10 years.WCAP-FTXX Film Capacitors Across the mains470 nF X2 220 0.121.28 GΩ -40 °C up to +105 °C 15 Carton ±10% Pitch 15 mm -40 °C up to +105 °C 310 18 8 14 Boxed THT
7447013SPEC
6 files Active i| Production is active. Expected lifetime: >10 years.WE-FI Leaded Toroidal Line Choke -40 °C up to +105 °C 4.6 0.09 40 18.5 10.5 THT
860020672012SPEC
7 files Active i| Production is active. Expected lifetime: >10 years.WCAP-ATG5 Aluminum Electrolytic Capacitors33 µF -40 °C up to +105 °C 2 Ammopack ±20% 10 2000 75 16.5 5 50 11
861021486029SPEC
7 files Active i| Production is active. Expected lifetime: >10 years.WCAP-AIG5 Aluminum Electrolytic Capacitors220 µF -25 °C up to +105 °C 10 Tray ±20% 35.0 x 37.0 -25 °C up to +105 °C 20 2000 1240 1980 35 450 37
885012206089SPEC
8 files Active i| Production is active. Expected lifetime: >10 years.WCAP-CSGP MLCCs 50 V(DC)10 nF10 GΩ 7" Tape & Reel ±10% 0603 -55 °C up to +125 °C 2.5 X7R Class II 0.4 50 1.6 0.8 0.8
750345199SPEC
Active i| Production is active. Expected lifetime: >10 years. Power Inductor
Samples
Order Code Data­sheet Simu­lation Downloads Status Product seriesPins (Value)
(pcs)
ApplicationPCB/Cable/PanelModularityTypeWire SectionCSafety ClassdV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOOperating TemperaturePitch
(mm)
PackagingTol. CSizeOperating TemperatureDF
(%)
Ceramic TypeFl
(mm)
Endurance
(h)
IRIPPLE
(mA)
ILeak
(µA)
Ø D
(mm)
IR
(A)
L
(mH)
RDC max.
(mΩ)
VR
(V (AC))
VT
(V (AC))
MaterialL
(mm)
W
(mm)
H
(mm)
Mount Samples