Topologie | Gegentaktwandler (Halbbrücken) |
Eingangsspannung | 4-38 V |
Ausgang 1 | 20 A |
IC-Revision | 1 |
The STDES-SICGP4 reference design is based on SiC MOSFETs.The platform contains a half-bridge structure that supports HiP247-4 (TO247-4) packages. Gate driver and isolated auxiliary supply are also assembled. The external connection of a digital signal to the gate drivers inputs allows controlling MOSFETs by switching to a half-bridge structure. For instance, this kit allows testing the switching performance of the MOSFETs, using the double-pulse test method (DPT).This document shows an example of a switching energies test, using DPT, as well as measured waveforms and results calculated from them.The main board specification and the input/output connection are detailed in UM3044. Read this user manual before testing the platform.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | Anwendung | PCB/Kabel/Panel | Modularity | Typ | Wire Section | Vin (V) | VOut1 (V) | VOut2 (V) | PO (W) | CWW 1 (pF) | L (µH) | ISAT (A) | fswitch (kHz) | n | Version | IC-Referenz | f | Montageart | Mittelkontakt | Betriebstemperatur | W (mm) | H (mm) | Ti | Tl (mm) | Pins (Value) (pcs) | Muster | |
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691213710002 | SPEC | – | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WR-TBL Series 213 - 5.00 mm Horiz.l Entry Modular | Rising Cage Clamp | PCB | Ja | Horizontal | 26 to 16 (AWG) 0.5 to 1.5 (mm²) | – | – | – | – | – | – | – | – | – | – | – | – | THT | – | -40 °C up to +105 °C | – | – | – | – | 2 | ||
74650094R | SPEC | – | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WP-THRBU REDCUBE THR with internal through-hole thread | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | THR | – | -55 °C up to +150 °C | 10 | 3.5 | M4 | 3 | 8 | ||
60311002111526 | SPEC | – | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WR-SMA PCB THT/THR/SMT | – | PCB | – | – | – | – | – | – | – | – | – | – | – | – | – | – | DC~6 GHz | THT | Ø 1.27 | -65 °C up to +165 °C | – | – | – | – | – | ||
750317894 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-AGDT Auxiliary Gate Drive Transformer | – | – | – | – | – | 9 - 18 | 15 | -4 | 3 | 7 | 18 | 1.6 | 350 | 2.25:3.5:1 | Flyback | LM5180 | – | SMT | – | -40 °C up to +130 °C | 10.95 | 11.94 | – | – | – |
Artikel Nr. | Datenblatt | Simulation | |
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691213710002 | SPEC | – | |
74650094R | SPEC | – | |
60311002111526 | SPEC | – | |
750317894 | SPEC |
Muster |
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Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | Anwendung | PCB/Kabel/Panel | Modularity | Typ | Wire Section | Vin (V) | VOut1 (V) | VOut2 (V) | PO (W) | CWW 1 (pF) | L (µH) | ISAT (A) | fswitch (kHz) | n | Version | IC-Referenz | f | Montageart | Mittelkontakt | Betriebstemperatur | W (mm) | H (mm) | Ti | Tl (mm) | Pins (Value) (pcs) | Muster |
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