Topologie | Gegentaktflusswandler |
Schaltfrequenz | 1000-25000 kHz |
IC-Revision | 2 |
The ultra-low-power STM32L073xx microcontrollers incorporate the connectivity power of the universal serial bus (USB 2.0 crystal-less) with the high-performance ARM® Cortex®- M0+ 32-bit RISC core operating at a 32 MHz frequency, a memory protection unit (MPU),high-speed embedded memories (up to 192 Kbytes of Flash program memory, 6 Kbytes of data EEPROM and 20 Kbytes of RAM) plus an extensive range of enhanced I/Os andperipherals.The STM32L073xx devices provide high power efficiency for a wide range of performance. It is achieved with a large choice of internal and external clock sources, an internal voltage adaptation and several low-power modes.The STM32L073xx device offer several analog features, one 12-bit ADC with hardware oversampling, two DACs, two ultra-low-power comparators, several timers, one low-powertimer (LPTIM), four general-purpose 16-bit timers and two basic timer, one RTC and one SysTick which can be used as timebases. They also feature two watchdogs, one watchdogwith independent clock and window capability and one window watchdog based on bus clock.Moreover, the STM32L073xx devices embed standard and advanced communication interfaces: up to three I2Cs, two SPIs, one I2S, four USARTs, a low-power UART(LPUART), and a crystal-less USB. The devices offer up to 24 capacitive sensing channels to simply add touch sensing functionality to any application.The STM32L073xx also include a real-time clock and a set of backup registers that remain powered in Standby mode.Finally, their integrated LCD controller has a built-in LCD voltage generator that allows to drive up to 8 multiplexed LCDs with contrast independent of the supply voltage.The ultra-low-power STM32L073xx devices operate from a 1.8 to 3.6 V power supply (down to 1.65 V at power down) with BOR and from a 1.65 to 3.6 V power supply without BORoption. They are available in the -40 to +125 °C temperature range. A comprehensive set of power-saving modes allows the design of low-power applications.
– 1.65 V to 3.6 V power supply
– -40 to 125 °C temperature range
– 0.29 μA Standby mode (3 wakeup pins)
– 0.43 μA Stop mode (16 wakeup lines)
– 0.86 μA Stop mode + RTC + 20 KB RAMretention
– Down to 93 μA/MHz in Run mode
– 5 μs wakeup time (from Flash memory)
– 41 μA 12-bit ADC (conversion at 10ksps)
– From 32 kHz up to 32 MHz max.
– 0.95 DMIPS/MHz
– Ultra-safe, low-power BOR (brownout reset)with 5 selectable thresholds
– Ultra-low-power POR/PDR
– Programmable voltage detector (PVD)
– 1 to 25 MHz crystal oscillator
– 32 kHz oscillator for RTC with calibration
– High speed internal 16 MHz factory-trimmed RC(+/- 1%)
– Internal low-power 37 kHz RC
– Internal multispeed low-power 65 kHz to4.2 MHz RC
– Internal self calibration of 48 MHz RC for USB
– PLL for CPU clock
– USB, USART supported
– Serial wire debug supported
– Up to 192 KB Flash memory with ECC (2 bankswith read-while-write capability)
– 20KB RAM
– 6 KB of data EEPROM with ECC
– 20-byte backup register
– Sector protection against R/W operation
– Support contrast adjustment
– Support blinking mode
– Step-up converted on board
– 12-bit ADC 1.14 Msps up to 16 channels (downto 1.65 V)
– 2 x 12-bit channel DACs with output buffers
– 2x ultra-low-power comparators (window modeand wake up capability, down to 1.8 V)
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IRP,40K (A) | ISAT (A) | RDC max. (mΩ) | fres (MHz) | Bauform | Version | Z @ 100 MHz (Ω) | Zmax (Ω) | Testbedingung Zmax | IR 2 (mA) | Z @ 1 GHz (Ω) | Typ | Muster | |
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744778520 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-PD SMT-Speicherdrossel | 100 | 0.63 | 0.5 | 1060 | 11 | 6033 | Robust | – | – | – | – | – | – | |||
742863160 | SPEC | 7 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-CBF HF SMT-Ferrit für Hochfrequenz-Anwendungen | – | – | – | 350 | – | 0603 | SMT | 600 | 950 | 600 MHz | 500 | 800 | High Current | |||
750315110 | SPEC | – | – | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Power Inductor | – | – | – | – | – | – | – | – | – | – | – | – | – |
Muster |
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Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IRP,40K (A) | ISAT (A) | RDC max. (mΩ) | fres (MHz) | Bauform | Version | Z @ 100 MHz (Ω) | Zmax (Ω) | Testbedingung Zmax | IR 2 (mA) | Z @ 1 GHz (Ω) | Typ | Muster |
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