IC-Hersteller Texas Instruments

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Texas Instruments PTH08080WAZT | Demoboard TIDA-01606 Power Card

10kW 3-Phase 3-Level Grid Tie Inverter Reference Design for Solar String Inverter

Details

TopologieSonstige Topologie
Eingangsspannung12 V
Ausgang 19 V
IC-RevisionE4

Beschreibung

This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC grid-tie inverter stage.Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.

Eigenschaften

  • Rated Nominal and Max Input Voltage at 800-V and 1000-V DC
  • Max 10-kW/10-kVA Output Power at 400-V AC 50- or 60-Hz Grid-Tie Connection
  • Operating Power Factor Range From 0.7 Lag to 0.7 Lead
  • High-Voltage (1200-V) SiC MOSFET-Based FullBridge Inverter for Peak Efficiency of 98.5%
  • Compact Output Filter by Switching Inverter at 50 kHz
  • <2% Output Current THD at Full Load
  • Isolated Driver ISO5852S With Reinforced Isolation for Driving High-Voltage SiC MOSFET and UCC5320S for Driving Middle Si IGBT
  • Isolated Current Sensing Using AMC1301 for Load Current Monitoring
  • TMS320F28379D Control Card for Digital Control

Typische Anwendungen

  • Instumentation
  • Telecommunications

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieλDom typ.
(nm)
FarbeλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chiptechnologie50% typ.
(°)
CVR
(V (DC))
Endurance
(h)
BetriebstemperaturIRIPPLE
(mA)
Z
(mΩ)
ILeak
(µA)
DF
(%)
Ø D
(mm)
L
(mm)
VerpackungZ @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR
(A)
Z @ 1 GHz
(Ω)
H
(mm)
Typ Muster
150060VS55040SPEC
6 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WL-SMCD SMT Mono-color Chip LED Diffused 573 Hellgrün 575 60 2 AlInGaP 140 1.6 Tape and Reel 0.4
74279221111SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-MPSB EMI Multilayer Power Suppression Bead 3.2 110 118 150 MHz 5.4 44 1.1 High Current
865060653010SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WCAP-ASLL Aluminium-Elektrolytkondensatoren100 µF 50 5000 -55 °C bis zu +105 °C 350 340 50 12 8 10.5 15" Tape & Reel
Artikel Nr. Daten­blatt Simu­lation
150060VS55040SPEC
74279221111SPEC
865060653010SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieλDom typ.
(nm)
FarbeλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chiptechnologie50% typ.
(°)
CVR
(V (DC))
Endurance
(h)
BetriebstemperaturIRIPPLE
(mA)
Z
(mΩ)
ILeak
(µA)
DF
(%)
Ø D
(mm)
L
(mm)
VerpackungZ @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR
(A)
Z @ 1 GHz
(Ω)
H
(mm)
Typ Muster