IC-Hersteller Texas Instruments
IC-Hersteller (99)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (27)
- Ablic (23)
- Advanced Power (4)
- Allegro Microsystems (84)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (163)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (47)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (238)
- Divimath (8)
- Elmos AG (1)
- EPC (99)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (7)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- Ikanos (3)
- IKON (1)
- Indie Semiconductor (5)
- Innovision Semiconductor Inc (2)
- Intel (80)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (2)
- Kinetic Technology (10)
- Lattice semiconductor Corporation (19)
- Littelfuse (1)
- M3 Technology (M3Tek) (7)
- Macnica (16)
- MaxLinear (175)
- MikroE (8)
- MindCet (2)
- Monolithic Power Systems (931)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (32)
- Nisshinbo Micro Device Inc. (10)
- Nordic Semiconductor (1)
- Novosense Micro (1)
- NXP (314)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (102)
- Pulsiv (19)
- Qorvo (87)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (296)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (90)
- SG-Micro (33)
- Silanna Semiconductor (8)
- Silergy Corporation (29)
- Silicon Laboratory Inc. (104)
- Silicontent Technology (57)
- Silvertel (56)
- Skycore Semiconductors (1)
- Skyworks (31)
- Southchip (8)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (18)
- Wise Integration (1)
- Wolfspeed (8)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Texas Instruments SN6505B | Demoboard TIDA-01606
10-kW, Bidirectional Three-Phase Three-Level (T-type) Inverter
Details
| Topologie | Inverswandler |
| Eingangsspannung | 600-1000 V |
| Ausgang 1 | 400 V / 18 A |
Beschreibung
This reference design provides an overview on how to implement a bidirectional three-level, three-phase, SiC-based active front end (AFE) inverter and PFC stage. The design uses a switching frequency of 50kHz and a LCL output filter to reduce the size of the magnetics. A peak efficiency of 99% is achieved. The design shows how to implement a complete three phase AFE control in the DQ domain. The control andsoftware is validated on the actual hardware and on hardware in the loop (HIL) setup.
Eigenschaften
- Rated nominal and maximum input voltage at 800-V and 1000-V DC, Max Power 10-kW/10-kVA at 400-V AC L-L 50 or 60 Hz
- Compact output LCL filter with switching frequency of 50 kHz
- < 2% output current THD at full load
- Isolated driver ISO5852S with reinforced isolation for driving high-voltage SiC MOSFET and UCC5320S for driving middle Si IGBT
- Isolated current sensing using AMC1301 for load current monitoring
- TMS320F28379D control card for digital control with Trignometric Math Unit (TMU) to accelerate PLL computation, comparator sub-system for protection implementation and Control Law Accelerator (CLA) to offload the control loops to the co-processor.
Typische Anwendungen
- String inverter, Central inverter, On-board (OBC) and wireless charger, DC charging (pile) station, Portable DC charger, Energy storage power conversion system (PCS)
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ. (nm) | Farbe | λPeak typ. (nm) | IV typ. (mcd) | VF typ. (V) | Chiptechnologie | 2θ50% typ. (°) | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | Fl (mm) | Vin | VOut1 (V (DC)) | IOut1 (A) | Isolierungstyp | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | L (µH) | VT (V (RMS)) | Montageart | Z @ 100 MHz (Ω) | Zmax (Ω) | Testbedingung Zmax | IR 2 (mA) | RDC max. (Ω) | Typ | IR (mA) | Z @ 1 GHz (Ω) | H (mm) | Pins (Value) (pcs) | Reihen | Gender | Verpackung | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 150060VS55040 | SPEC | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WL-SMCD SMT Mono-color Chip LED Diffused | 573 | Hellgrün | 575 | 60 | 2 | AlInGaP | 140 | – | – | – | 0603 | -40 °C up to +85 °C | – | – | – | 1.6 | 0.8 | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | 0.4 | – | – | – | Tape and Reel | ||
 | 742792662 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-CBF SMT-Ferrit | – | – | – | – | – | – | – | – | – | – | 0603 | -55 °C up to +125 °C | – | – | – | 1.6 | 0.8 | 0.3 | – | – | – | – | – | – | – | – | – | SMT | 1000 | 1050 | 120 MHz | 830 | 0.3 | Breitband | 600 | 186 | 0.8 | – | – | – | – | ||
 | 74279228260 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | – | – | – | – | – | – | – | 0603 | -55 °C up to +125 °C | – | – | – | 1.6 | 0.8 | 0.3 | – | – | – | – | – | – | – | – | – | SMT | 26 | 39 | 515 MHz | 6500 | 0.008 | High Current | 6500 | 33 | 0.8 | – | – | – | – | ||
 | 885012206040 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 16 V(DC) | – | – | – | – | – | – | – | 10 nF | ±10% | 16 | 0603 | -55 °C up to +125 °C | 3.5 | 10 GΩ | X7R Klasse II | 1.6 | 0.8 | 0.4 | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | 0.8 | – | – | – | 7" Tape & Reel | ||
| 885012206095 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 50 V(DC) | – | – | – | – | – | – | – | 100 nF | ±10% | 50 | 0603 | -55 °C up to +125 °C | 3 | 5 GΩ | X7R Klasse II | 1.6 | 0.8 | 0.4 | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | 0.8 | – | – | – | 7" Tape & Reel | ||
 | 61300411021 | SPEC | – | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WR-PHD 2.54 mm THT Angled Pin Header | – | – | – | – | – | – | – | – | – | – | – | -40 °C up to +105 °C | – | 1000 MΩ | – | 10.16 | – | – | – | – | – | – | – | – | – | – | – | THT | – | – | – | – | – | Angled | 3000 | – | – | 4 | Single | Pin Header | Beutel | |
 | 750313638 | SPEC | – | 7 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-PPTI Push-Pull Transformers | – | – | – | – | – | – | – | – | – | – | 1209 | -40 °C up to +125 °C | – | – | – | 9.14 | 12.7 | – | 5 V (DC) | 5 | 0.65 | Reinforced | 300 - 620 | 10 | 1:1.3 | 340 | 5000 | SMT | – | – | – | – | – | – | – | – | 7.62 | – | – | – | Tape and Reel |
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
| 150060VS55040 | SPEC | |
| 742792662 | SPEC | |
| 74279228260 | SPEC | |
| 885012206040 | SPEC | |
| 885012206095 | SPEC | |
| 61300411021 | SPEC | – |
| 750313638 | SPEC | – |
| Muster |
|---|
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ. (nm) | Farbe | λPeak typ. (nm) | IV typ. (mcd) | VF typ. (V) | Chiptechnologie | 2θ50% typ. (°) | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | Fl (mm) | Vin | VOut1 (V (DC)) | IOut1 (A) | Isolierungstyp | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | L (µH) | VT (V (RMS)) | Montageart | Z @ 100 MHz (Ω) | Zmax (Ω) | Testbedingung Zmax | IR 2 (mA) | RDC max. (Ω) | Typ | IR (mA) | Z @ 1 GHz (Ω) | H (mm) | Pins (Value) (pcs) | Reihen | Gender | Verpackung | Muster |
|---|