IC-Hersteller Texas Instruments

IC-Hersteller (97)

Texas Instruments TIDA01604

TIDA 01604

Details

TopologieLeistungsfaktor-Korrektur
Eingangsspannung240 V
Ausgang 1600 V

Beschreibung

This reference design functions from a base of silicon carbide (SiC) MOSFETs driven by a C2000™ microcontroller (MCU) with SiC-isolated gate drivers. The design implements three-phase interleaving and operates in continuous conduction mode (CCM) to achieve a 98.46% efficiency at a 240-V input voltage and 6.6-kW full power.

Eigenschaften

  • High-Power-Density, High-Efficiency PFC Design to Power Systems up to 6.6 kW
  • SiC MOSFETs With TI Drivers Offers Higher Integration for Customers
  • Half-Bridge- and Compact Isolated Gate Driver With Reinforced Isolation and Two-Level Turnoff Protection
  • Full Digital Control With High-Performance C2000™ Controller to Enable Advanced Control Scheme

Typische Anwendungen

  • HEV/EV Traction Inverter/ Electronic Control Units/ HEV/EV DC/DC Converters
  • HEV/EV Onboard Charger

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieAnwendungCSicherheitsklassedV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOBetriebstemperaturRaster
(mm)
VerpackungIR
(A)
L
(mH)
RDC max.
(mΩ)
VR
(V (AC))
VT
(V (AC))
MaterialL
(mm)
W
(mm)
H
(mm)
Montageart Muster
890324026034SPEC
8 Dateien WCAP-FTX2 Folienkondensatoren Across the mains2.2 µF X2 170 0.14.55 GΩ -40 °C bis zu +105 °C 22.5 Lose 275 26 15 25 Boxed THT
7448052502SPEC
9 Dateien WE-CMBNC Stromkompensierte Netzdrossel Nanokristallin 25 2.5 2.2 300 2100 Nanokristallin 36 23 34 THT
7508110162SPEC
Offline Transformer
Artikel Nr. Daten­blatt Simu­lation
890324026034SPEC
7448052502SPEC
7508110162SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieAnwendungCSicherheitsklassedV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOBetriebstemperaturRaster
(mm)
VerpackungIR
(A)
L
(mH)
RDC max.
(mΩ)
VR
(V (AC))
VT
(V (AC))
MaterialL
(mm)
W
(mm)
H
(mm)
Montageart Muster