IC manufacturers Texas Instruments

IC manufacturers (97)

Texas Instruments TIDA01604

TIDA 01604

Overview

TopologyPower Factor Correction
Input voltage240 V
Output 1600 V

Description

This reference design functions from a base of silicon carbide (SiC) MOSFETs driven by a C2000™ microcontroller (MCU) with SiC-isolated gate drivers. The design implements three-phase interleaving and operates in continuous conduction mode (CCM) to achieve a 98.46% efficiency at a 240-V input voltage and 6.6-kW full power.

Features

  • High-Power-Density, High-Efficiency PFC Design to Power Systems up to 6.6 kW
  • SiC MOSFETs With TI Drivers Offers Higher Integration for Customers
  • Half-Bridge- and Compact Isolated Gate Driver With Reinforced Isolation and Two-Level Turnoff Protection
  • Full Digital Control With High-Performance C2000™ Controller to Enable Advanced Control Scheme

Typical applications

  • HEV/EV Traction Inverter/ Electronic Control Units/ HEV/EV DC/DC Converters
  • HEV/EV Onboard Charger

Products

Order Code Data­sheet Simu­lation Downloads Product seriesApplicationCSafety ClassdV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOOperating TemperaturePitch
(mm)
PackagingIR
(A)
L
(mH)
RDC max.
(mΩ)
VR
(V (AC))
VT
(V (AC))
MaterialL
(mm)
W
(mm)
H
(mm)
Mount Samples
890324026034SPEC
8 files WCAP-FTX2 Film Capacitors Across the mains2.2 µF X2 170 0.14.55 GΩ -40 °C up to +105 °C 22.5 Bulk 275 26 15 25 Boxed THT
7448052502SPEC
9 files WE-CMBNC Common Mode Power Line Choke Nanocrystalline 25 2.5 2.2 300 2100 Nanocrystalline 36 23 34 THT
7508110162SPEC
Offline Transformer
Order Code Data­sheet Simu­lation
890324026034SPEC
7448052502SPEC
7508110162SPEC
Samples
Order Code Data­sheet Simu­lation Downloads Product seriesApplicationCSafety ClassdV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOOperating TemperaturePitch
(mm)
PackagingIR
(A)
L
(mH)
RDC max.
(mΩ)
VR
(V (AC))
VT
(V (AC))
MaterialL
(mm)
W
(mm)
H
(mm)
Mount Samples