OverviewAll product unitsProduct unitPassive ComponentsProduct groupPower MagneticsProduct familyTransformers For DC/DC ConverterProduct seriesWE-AGDT Auxiliary Gate Drive Transformer

WE-AGDT Auxiliary Gate Drive Transformer

for SiC-MOSFET and IGBT

WE-AGDT Auxiliary Gate Drive Transformer
Size Dimen­sions 3DL
(mm)
W
(mm)
H
(mm)
Mount
EP7 11.3 10.95 11.94 SMT

Characteristics

  • Interwinding capacitance down to <1 pF
  • Tiny surface mount EP7 package
  • Dielectric insulation up to 4 kV AC
  • Basic insulation for 568 Vrms / 800 Vpk
  • Safety: IEC62368-1 / IEC61558-2-16
  • AEC-Q200 qualification
  • Operating temperature: -40 °C up to +130 °C
  • Common control voltages for SiC MOSFET’s
  • High Common-mode Transient Immunity (CMTI)
  • Flyback, LLC, Half-Bridge topologies
  • Up to 6 W output power
  • Wide range input voltages 6 V to 36 V
  • Different unipolar and bipolar voltages
  • High efficiency and very compact solution
  • Reference designs with Analog Devices, Texas Instruments, STMicroelectronics and onsemi

Reference Designs

  • RD001 6 W Bipolar isolated auxiliary supply for SiC-MOSFET and IGBT gate driver
  • RD002 6 W Unipolar isolated auxiliary supply for SiC-MOSFET and IGBT gate driver

Applications

  • Industrial drives
  • AC motor inverters
  • HEV/EV charging station
  • Battery chargers
  • Solar inverters
  • Data centers
  • Uninterruptible power supplies
  • Active power factor correction
  • SiC-MOSFET based power converter

Products

EP7
Order Code Data­sheet Simu­lation Downloads StatusVIN
(V)
VOut1
(V)
VOut2
(V)
VOut3
(V)
Vaux
(V)
PO
(W)
CWW 1
(pF)
L
(µH)
ISAT
(A)
∫Udt
(Vµs)
fswitch
(kHz)
nVersionIC ReferenceReference Design Samples
750319282SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 6 - 18 20 5 5 5 1.5 6.4 42 1.2 150 1.56:3.89:1:1:1 Flyback NCV(P)3064Onsemi
750319836SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 6 9 2 23 40 500 1:1.57 LLC UCC25800
750318616SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 7 - 31 27 13 2.7 3.25 10 2 400 1.2:2:1 Flyback STGAP4SSTMicroelectronics
750319177SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 7.5 13 4.55 0.68 16.5 36 500 1:1.67 LLC UCC25800Texas Instruments
750319834SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 7.5 7.5 2.6 67 70 500 1:1.08 LLC UCC25800Texas Instruments
750319835SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 7.5 9 2.1 23 40 500 1:1.29 LLC UCC25800Texas Instruments
750318131SPEC
8 files Active i| Production is active. Expected lifetime: >10 years. 9 - 18 15 -4 6 7.5 7 5 350 2.25:3.5:1 Flyback LT8302Analog Devices
750318114SPEC
8 files Active i| Production is active. Expected lifetime: >10 years. 9 - 18 19 6 6.8 6 6.2 350 1:2 Flyback LT8302Analog Devices
750317894SPEC
8 files Active i| Production is active. Expected lifetime: >10 years. 9 - 18 15 -4 3 7 18 1.6 350 2.25:3.5:1 Flyback LM5180Texas Instruments
750317893SPEC
8 files Active i| Production is active. Expected lifetime: >10 years. 9 - 18 19 3 6.8 18 1.95 350 1:2 Flyback LM5180Texas Instruments
750319497SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 9 - 18 19 4 6 7.5 7 4.5 350 2.25:4.25:1 Flyback LT8302Analog Devices
750319496SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 9 - 18 20 5 6 7.3 7 4.5 350 1.8:3.6:1 Flyback LT8302Analog Devices
750319077SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 12 - 18 15 7.5 7.5 5 1.5 7.8 42 1.25 150 2:2.86:1.43:1.43:1 Flyback NCV(P)3064Onsemi
750319331SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 13 11.5 6 1.3 50 60 500 1:1 LLC UCC25800Texas Instruments
750319565SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 15 30 3 2.1 256 72 250 1:2 Half-Bridge
750319831SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 15 6 2 56 64 500 2.2:1 LLC UCC25800Texas Instruments
750319832SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 15 7.5 2 56 64 500 1.83:1 LLC UCC25800Texas Instruments
750319833SPEC
7 files Active i| Production is active. Expected lifetime: >10 years. 15 12 2 67 70 500 1.2:1 LLC UCC25800Texas Instruments
750318208SPEC
8 files Active i| Production is active. Expected lifetime: >10 years. 18 - 36 15 -4 5 7 27 1.5 350 3.5:3.5:1 Flyback LM5180Texas Instruments
750318207SPEC
8 files Active i| Production is active. Expected lifetime: >10 years. 18 - 36 19 5 8.2 27 2 350 1:1.2 Flyback LM5180Texas Instruments
Order Code Data­sheet Simu­lation
750319282SPEC
750319836SPEC
750318616SPEC
750319177SPEC
750319834SPEC
750319835SPEC
750318131SPEC
750318114SPEC
750317894SPEC
750317893SPEC
750319497SPEC
750319496SPEC
750319077SPEC
750319331SPEC
750319565SPEC
750319831SPEC
750319832SPEC
750319833SPEC
750318208SPEC
750318207SPEC
Samples
Order Code Data­sheet Simu­lation Downloads StatusVIN
(V)
VOut1
(V)
VOut2
(V)
VOut3
(V)
Vaux
(V)
PO
(W)
CWW 1
(pF)
L
(µH)
ISAT
(A)
∫Udt
(Vµs)
fswitch
(kHz)
nVersionIC ReferenceReference Design Samples

WE AGDT – Compact Power Supply SMT Transformer for SiC-MOSFET’s

Drive hard. Drive safe.

Auxiliary Gate Drive Transformer

The WE-AGDT series from Würth Elektronik allows implementing discrete SiC gate driver designs easier than ever before. These standard parts are compact SMT transformers optimized for silicon carbide applications. With extremely low interwinding capacitance, the WE-AGDT helps to achieve higher Common Mode Transient Immunity (CMTI).

The series is compliant with safety standards according to IEC62368-1 / IEC61558-2-16 in addition to AEC-Q200 qualification. Reference designs are available for each WE-AGDT transformer. The complete solution is compact and capable of fully automated assembly.

Impact of Interwinding Capacitance

Importance of minimizing displacement current / common-mode current

SiC-MOSFETs can switch extremely fast, causing very high rates of rise and fall of voltage (dv/dt) across the device terminals and in turn, across the isolation barrier parasitic capacitances, which are a contribution of the transformer in the auxiliary supply (Ciso-xfmr) and the gate driver IC controller or digital isolator used (Ciso-drv).

As a result, common-mode displacement currents are generated which, if high enough, may cause loss of control of the SiC-MOSFET device as well as EMI issues, since high dv/dt also appears across PCB nodes and Earth/Chassis. The lower the parasitic capacitance, the lower the displacement currents generated, helping to prevent such issues.

Compared to regular transformers

The WE-AGDT transformers have been engineered with extremely-low interwinding capacitance in order to help the application withstand higher switching speeds (dv/dt), and with it to achieve higher efficiency as well as a smaller solution size and lower system cost.

Compared to regular, same-sized transformers, the WE-AGDT feature less than half of the parasitic capacitance, as required by state-of-the-art SiC-MOSFET and IGBT applications.

SiC Gate Driver System

One of the main applications of high-voltage SiC-MOSFETs and IGBTs is in high-power AC inverters and AC-Motor drives. Such power stages are built by ‘paralleling’ several half-bridge configurations of SiC devices in order to generate the different phase currents and voltages for the load.

Each of the SiC-MOSFET devices typically has its own isolated gate driver system formed by the gate driver IC and the auxiliary supply (e.g. Würth Elektronik RD001 reference design with WE-AGDT).

A simplified schematic of an example application of a 3-phase inverter formed by three half-bridge stages paralleled and six SiC-MOSFET devices in total is shown in the image, in addition to a detail connection of the isolated auxiliary supply, isolated gate driver IC and the corresponding SiC-MOSFET device.

Videos

WE meet @ Digital Days 2020: SiC Gate Driver Systems with WE-AGDT series