IC manufacturers Analog Devices

IC manufacturers (103)

Analog Devices LTC3634

15V Dual 3A Monolithic Step-Down Regulator for DDR Power

Overview

TopologyBuck Converter
Input voltage3.6-15 V
Switching frequency500-4000 kHz
Output 13 V / 3 A
IC revisionB

Description

The LTC®3634 is a high efficiency, dual-channel monolithic synchronous step-down regulator which provides power supply and bus termination rails for DDR1, DDR2, and DDR3 SDRAM controllers. The operating input voltagerange is 3.6V to 15V, making it suitable for point-of-load power supply applications from a 5V or 12V input, as well as various battery powered systems.The VTT regulated output voltage is equal to VDDQIN•0.5. An on-chip buffer capable of driving a 10mA load pro- vides a low noise reference output (VTTR) also equal to VDDQIN •0.5.The operating frequency is programmable and synchronizable from 500kHz to 4MHz with an external resistor. The two channels can operate 180° out-of-phase, which relaxes the requirements for input and output capacitance.The unique controlled on-time architecture is ideal for powering DDR applications from a 12V supply at high switching frequencies, allowing the use of smaller external components.The LTC3634 is offered in both 28-pin 4mm × 5mm QFN and 28-pin exposed pad TSSOP packages.

Features

  • 3.6V to 15V Input Voltage Range
  • ±3A Output Current per Channel
  • Up to 95% Efficiency
  • Selectable 90°/180° Phase Shift Between Channels
  • Adjustable Switching Frequency: 500kHz to 4MHz
  • VTTR = VDDQ/2 = VTT Reference
  • ±1.6% Accurate VTTR at 0.75V
  • Optimal VOUT Range: 0.6V to 3V
  • ±10mA Buffered Output Supplies VREF Reference Voltage
  • Current Mode Operation for Excellent Line and Load Transient Response
  • External Clock Synchronization
  • Short-Circuit Protected
  • Input Overvoltage and Overtemperature Protection
  • Power Good Status Outputs
  • Available in (4mm × 5mm) QFN-28 and Thermally Enhanced 28-Lead TSSOP Packages

Note: Inductor Selection Table is mentioned in page 14

Typical applications

  • DDR Memory Power Supplies

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Samples
WE-HCI SMT Flat Wire High Current Inductor, 0.24 µH, 28.8 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance0.24 µH
Performance Rated Current28.8 A
Saturation Current @ 10%18 A
Saturation Current @ 30%40 A
DC Resistance1.8 mΩ
Self Resonant Frequency220 MHz
MaterialSuperflux 
WE-HCI SMT Flat Wire High Current Inductor, 0.52 µH, 19.2 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance0.52 µH
Performance Rated Current19.2 A
Saturation Current @ 10%8.5 A
Saturation Current @ 30%20 A
DC Resistance3.7 mΩ
Self Resonant Frequency140 MHz
MaterialSuperflux 
WE-HCI SMT Flat Wire High Current Inductor, 0.95 µH, 14.4 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance0.95 µH
Performance Rated Current14.4 A
Saturation Current @ 10%5 A
Saturation Current @ 30%13 A
DC Resistance6.2 mΩ
Self Resonant Frequency90 MHz
MaterialSuperflux 
WE-HCI SMT Flat Wire High Current Inductor, 1.15 µH, 11.8 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance1.15 µH
Performance Rated Current11.8 A
Saturation Current @ 10%7.5 A
Saturation Current @ 30%13 A
DC Resistance8.6 mΩ
Self Resonant Frequency84 MHz
MaterialSuperflux 
WE-HCI SMT Flat Wire High Current Inductor, 2 µH, 8.7 A
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance2 µH
Performance Rated Current8.7 A
Saturation Current @ 10%3 A
Saturation Current @ 30%9 A
DC Resistance14.2 mΩ
Self Resonant Frequency58 MHz
MaterialSuperflux