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Cambridge GaN Devices CGD65A055S2 | Demoboard CGD-ASYEVB00701-01 / CGD-UG2202
650 V / 55 mOhm GaN HEMT with ICeGaN™ Gate and Current Sense
Overview
| Topology | Half-Bridge Converter symmetrical isolated |
| Input voltage | 0-18 V |
| Output 1 | 650 V |
| IC revision | 1 |
Description
The Half Bridge Evaluation Board allows ICeGaN variants to be used with a readily available silicon MOSFET driver, demonstrating state of the art performance combined with easy implementation of ICeGaN into an existing design.This evaluation board is available in a number of variants with matched high side & low side devices, with either 55mΩ, 130mΩ 5x6, 130mΩ 8x8, 200mΩ 5x6 or 240mΩ 5x6 650 V GaN HEMTs and variable gate drive voltage from 9 V to 20 V.All board functionality is identical for all variants.
Features
- 650 V CGD Enhancement Mode GaN HEMTs with ICeGaN™ Gate
- 2 x Silicon Labs SI8271AB-IS Isolated Gate Driver (1 per side), adjustable drive amplitude 9-20 V
Typical applications
- PSUs, Industrial SMPS and inverters
- Server power and datacentres, Telecom rectifiers
- Gaming PSUs, PC power, General purpose SMPS
More information
Products
Order Code | Datasheet | Downloads | Status | Product series | Pins | Type | Mount | L(mm) | IR(A) | Working Voltage(V (AC)) | Operating Temperature | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WR-PHD Pin Header - Dual, 4, Straight | Downloads7 files | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWR-PHD Pin Header - Dual | Pins4 | TypeStraight | MountSMT | Length5.08 mm | Rated Current3 A | Working Voltage250 V (AC) | Operating Temperature -40 °C up to +105 °C |