Cambridge GaN Devices CGD65A055SH2 | Demoboard AN2206 - Current Sensing with ICeGaN

Description

This application note relates to Cambridge GaN Devices (CGD) H2 series devices1. It explains why current sensing is requiredin most power conversion circuits. The document considers the strengths and weaknesses of existing methods and goeson to describe a unique property of CGD ICeGaN devices: that they provide a current sense function without breaking into,and thereby compromising, the high current loop (from supply decoupling capacitor, through the magnetic and deviceand back to the decoupling capacitor).

Features

Introducing the CGD65A055SH2, an enhancement mode GaN-on-silicon power transistor that capitalizes on the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronics applications.

Featuring CGD's ICeGaN gate technology, the CGD65A055SH2 offers compatibility with almost all gate drivers and controller chips. The integrated current sense function eliminates the need for a separate current sense resistor in series with the source, reducing efficiency losses. As a result, the device can be directly soldered to the large copper area of the ground plane, enhancing thermal performance and simplifying thermal design.

The H2 series ICeGaN also incorporates an advanced NL³ Circuit, leading to record low power losses at No Load and Light Load operations.

Packaged in a DFN 8x8 SMD, the CGD65A055SH2 supports high-frequency operation while ensuring exceptional thermal performance.

Typical applications

• PV inverters
• PSUs, Industrial SMPS and inverters
• AC/DC and DC/DC converters, AC inverters, General purpose SMPS
• LED drivers
• Server power and data centers, Telecom rectifiers
• Gaming PSUs, PC power, High power ClassD Audio Amplifiers

More information

• Datasheet
• IC product information