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Overview
| Topology | Other Topology |
Description
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral devicestructure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Features
- Ultra High Efficiency
- Ultra Low RDS(on)
- Ultra low QG
- Ultra small footprint
Typical applications
- Class D Audio
- Hard Switched and High Frequency Circuits
- High Speed DC-DC conversion
More information
Products
| Order Code | Datasheet | Downloads | Status | Product series | Pins (Value) (pcs) | Pitch (mm) | Gender | Type | Mount | IR (A) | Working Voltage (V (AC)) | PCB/Cable/Panel | Contact Resistance (mΩ) | Tol. R | L (mm) | Packaging | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 645002114822 | SPEC | 6 files | Active i| Production is active. Expected lifetime: >10 years. | WR-WTB 3.96 mm Male Vertical Locking Header | 2 | 3.96 | Male | Vertical | THT | 7 | 250 | PCB | 20 | max. | 7.92 | Bag |
| Order Code | Datasheet | |
|---|---|---|
| 645002114822 | SPEC |
| Samples |
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| Order Code | Datasheet | Downloads | Status | Product series | Pins (Value) (pcs) | Pitch (mm) | Gender | Type | Mount | IR (A) | Working Voltage (V (AC)) | PCB/Cable/Panel | Contact Resistance (mΩ) | Tol. R | L (mm) | Packaging | Samples |
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