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Overview
| Topology | Buck Converter |
| Input voltage | 8-19 V |
| Output 1 | 1.2 V / 18 A |
Description
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Features
-Ultra High Efficiency
-Ultra Low RDS(on)
Ultra low QG
-Ultra small footprint
Typical applications
- C conversion
- High Speed DC-DC conversion
- Hard Switched and High Frequency Circuits
More information
Products
| Order Code | Datasheet | Simulation | Downloads | Status | Product series | L (nH) | LR (nH) | IR (A) | ISAT,10% (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 744303022 | SPEC PCN pendingDue to a pending PCN, a modification of the component will be implemented soon. Please find the PCN below. If you have further questions please get in contact with our sales staff. | 8 files | Active i| Production is active. Expected lifetime: >10 years. | WE-HCM SMT High Current Flat Wire Inductor | 220 | 180 | 31 | 27 | 34.5 | 0.325 | 80 | MnZn |
| Order Code | Datasheet | Simulation | |
|---|---|---|---|
| 744303022 | SPEC PCN pendingDue to a pending PCN, a modification of the component will be implemented soon. Please find the PCN below. If you have further questions please get in contact with our sales staff. |
| Samples |
|---|
| Order Code | Datasheet | Simulation | Downloads | Status | Product series | L (nH) | LR (nH) | IR (A) | ISAT,10% (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | Samples |
|---|