Description
The EPC9098 development board is a 170 V maximum device voltage,17 A maximum output current, half bridge with onboard gate drives, featuring the EPC2059 GaN field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2059 by including all the critical components on a single board that can be easily connected into many existing converter topologies.The EPC9098 development board measures 2” x 2” and contains two EPC2059 GaN FETs in a half bridge configuration with the Texas Instruments LMG1210 gate driver. The board also contains all critical components and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A block diagram of the circuit is given in figure 1.For more information on EPC2059 please refer to the datasheet available from EPC at www.epc-co.com. The datasheet should be read in conjunction with this quick start guide.