IC manufacturers Intel

IC manufacturers (104)

Intel 5CSEMA5F31C6N

Cyclone V Device

Overview

TopologyBoost Converter
Switching frequency800 kHz
IC revision2012.12.28

Description

The Cyclone® V devices are designed to simultaneously accommodate the shrinking power consumption, cost, and time-to-market requirements; and the increasing bandwidth requirements for high-volume and cost-sensitive applications. Enhanced with integrated transceivers and hard memory controllers, the Cyclone V devices are suitable for applications in the industrial, wireless and wireline, military, and automotive markets.

Features

  • TSMC's 28-nm low-power (28LP) process technology
  • 1.1 V core voltage
  • Wirebond low-halogen packages
  • Multiple device densities with compatible package footprints for seamless migrationbetween different device densities
  • RoHS-compliant optionsEnhanced 8-input ALM with four registers
  • M10K—10-kilobits (Kb) memory blocks with soft error correction code (ECC)
  • Memory logic array block (MLAB)—640-bit distributed LUTRAM where you canuse up to 25% of the ALMs as MLAB memory
  • Native support for up to three signal processing precision levels(three 9 x 9, two 18 x 18, or one 27 x 27 multiplier) in the samevariable-precision DSP block
  • 64-bit accumulator and cascade
  • Embedded internal coefficient memory
  • Preadder/subtractor for improved efficiencyDDR3, DDR2, and LPDDR2 with 16 and 32 bit ECC supportPCI Express® (PCIe®) Gen2 and Gen1 (x1, x2, or x4) hard IP withmultifunction support, endpoint, and root port
  • Up to 550 MHz global clock network
  • Global, quadrant, and peripheral clock networks
  • Clock networks that are not used can be powered down to reduce dynamic power
  • Precision clock synthesis, clock delay compensation, and zero delay buffering (ZDB)
  • Integer mode and fractional mode
  • 875 megabits per second (Mbps) LVDS receiver and 840 Mbps LVDS transmitter
  • 400 MHz/800 Mbps external memory interface
  • On-chip termination (OCT)
  • 3.3 V support with up to 16 mA drive strength
  • 614 Mbps to 5.0 Gbps integrated transceiver speed
  • Transmit pre-emphasis and receiver equalization
  • Dynamic partial reconfiguration of individual channels
  • Single or dual-core ARM Cortex-A9 MPCore processor-up to 800 MHz maximumfrequency with support for symmetric and asymmetric multiprocessing
  • Interface peripherals—10/100/1000 Ethernet media access control (EMAC), USB 2.0On-The-GO (OTG) controller, quad serial peripheral interface (QSPI) flash controller,NANDflash controller, Secure Digital/MultiMediaCard (SD/MMC) controller, UART,controller area network (CAN), serial peripheral interface (SPI), I2C interface, andup to 85 HPS GPIO interfaces
  • System peripherals—general-purpose timers, watchdog timers, direct memory access(DMA) controller, FPGA configuration manager, and clock and reset managers
  • On-chip RAM and boot ROM
  • HPS–FPGA bridges—include the FPGA-to-HPS, HPS-to-FPGA, and lightweightHPS-to-FPGA bridges that allow the FPGA fabric to issue transactions to slaves inthe HPS, and vice versa
  • FPGA-to-HPS SDRAM controller subsystem—provides a configurable interface tothe multiport front end (MPFE) of the HPS SDRAM controller
  • ARM CoreSight™ JTAG debug access port, trace port, and on-chip trace storage
  • Tamper protection—comprehensive design protection to protect your valuable IPinvestments
  • Enhanced advanced encryption standard (AES) design security features
  • CvP
  • Partial and dynamic reconfiguration of the FPGA
  • Active serial (AS) x1 and x4, passive serial (PS), JTAG, and fast passive parallel (FPP)x8 and x16 configuration options

More information

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Qty.
Pins
Version
Mount
L(mm)
H(mm)
IR(mA)
Operating Temperature
Packaging
Z @ 100 MHz(Ω)
Zmax(Ω)
Test Condition Zmax
IR 2(mA)
RDC max.(mΩ)
Type
SamplesAvailability & Sample
SPECWE-HCI SMT Flat Wire High Current Inductor, 1 µH, 16.8 A
Simu­lation
Availability
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance1 µH
Performance Rated Current16.8 A
Saturation Current @ 10%8 A
Saturation Current @ 30%19 A
DC Resistance4.6 mΩ
Self Resonant Frequency85 MHz
MaterialSuperflux 
Packaging Unit1000 
Pins
VersionSMT 
MountSMT 
Length7 mm
Height3.8 mm
Operating Temperature -40 °C up to +150 °C
DC Resistance4.6 mΩ
Check availability
SPECWE-HCI SMT Flat Wire High Current Inductor, 1.5 µH, 16.4 A
Simu­lation
Availability
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance1.5 µH
Performance Rated Current16.4 A
Saturation Current @ 10%4 A
Saturation Current @ 30%11 A
DC Resistance4.3 mΩ
Self Resonant Frequency110 MHz
MaterialSuperflux 
Packaging Unit1000 
Pins
VersionSMT 
MountSMT 
Length7 mm
Height4.8 mm
Operating Temperature -40 °C up to +150 °C
DC Resistance4.73 mΩ
Check availability
SPECWE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Availability
Status Activei| Production is active. Expected lifetime: >10 years.
Packaging Unit4000 
VersionSMT 
MountSMT 
Length1.6 mm
Height0.8 mm
Rated Current2000 mA
Operating Temperature -55 °C up to +125 °C
Impedance @ 100 MHz30 Ω
Maximum Impedance40 Ω
Maximum Impedance1000 MHz 
Rated Current 23000 mA
DC Resistance40 mΩ
TypeHigh Current 
Check availability
SPECWE-CBF SMT EMI Suppression Ferrite Bead, –, –
Simu­lation
Availability
Status Activei| Production is active. Expected lifetime: >10 years.
Packaging Unit4000 
VersionSMT 
MountSMT 
Length1.6 mm
Height0.8 mm
Rated Current2000 mA
Operating Temperature -55 °C up to +125 °C
Impedance @ 100 MHz60 Ω
Maximum Impedance110 Ω
Maximum Impedance600 MHz 
Rated Current 23000 mA
DC Resistance40 mΩ
TypeHigh Current 
Check availability
SPECWR-BHD 2.00 mm Male, –, –
Simu­lation
Availability
Status Activei| Production is active. Expected lifetime: >10 years.
Product seriesWR-BHD 2.00 mm Male
Pins14 
MountTHT 
Length21.2 mm
Rated Current2000 mA
Operating Temperature -40 °C up to +125 °C
PackagingTray 
TypeStraight 
Check availability