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SG-Micro SGM6611C | Demoboard SGM6611CYTQV11G/TR Demo Board
12.6V, 7A Fully-Integrated Synchronous Boost Converter
Overview
| Topology | Boost Converter |
| Input voltage | 2.7-12 V |
| Output 1 | 12.6 V |
| IC revision | B |
Description
The SGM6611C is a fully-integrated synchronous Boost converter. The 2.7V to 12V operating input voltage is suitable for single-cell or two-cell Li-Ion/Polymer batteries. This device is capable of providing 7A continuous switch current and an output voltage range of 4.5V to 12.6V.The SGM6611C has two operation modes, the pulse width modulation (PWM) mode and pulse frequency modulation (PFM). The PWM mode is applied at moderate to heavy load. The PFM mode is applied at light load to improve the efficiency. The protection features include output over-voltage protection at 13.2V, cycle-by-cycle over-current protection and thermal shutdown. The device also involves the functions of 4ms built-in soft-start and adjustable switch peak current limit.The SGM6611C is available in a Green TQFN-2×2.5- 11L package.
Features
- 2.7V to 12V Input Voltage Range
- 4.5V to 12.6V Output Voltage Range
- Up to 90% Efficiency (VIN = 3.3V, VOUT = 9V and IOUT = 1.5A)
- Adjustable Peak Current Limit up to 9.5A for High Pulse Current
- 1.1MHz Fixed Switching Frequency (PWM Mode)
- 4ms Built-in Soft-Start
- PFM Operation Mode at Light Load
- 13.2V Internal Output Over-Voltage Protection
- Cycle-by-Cycle Over-Current Protection
- Thermal Shutdown
- Available in a Green TQFN-2×2.5-11L Package
Typical applications
- Fast-Charging Power Bank
- Bluetooth Speaker
- Portable POS Machine
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | RDC typ.(mΩ) | RDC max.(mΩ) | Mount | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-XHMI SMT Power Inductor, 1 µH, 15.75 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-XHMI SMT Power Inductor | Inductance1 µH | Performance Rated Current15.75 A | Saturation Current @ 10%11 A | Saturation Current @ 30%24.95 A | DC Resistance5.5 mΩ | Self Resonant Frequency59 MHz | – | DC Resistance5.5 mΩ | DC Resistance6.05 mΩ | MountSMT | ||||
 | WE-HCI SMT Flat Wire High Current Inductor, 1.5 µH, 13.8 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCI SMT Flat Wire High Current Inductor | Inductance1.5 µH | Performance Rated Current13.8 A | Saturation Current @ 10%4.5 A | Saturation Current @ 30%14 A | DC Resistance6.6 mΩ | Self Resonant Frequency72 MHz | MaterialSuperflux | – | DC Resistance7.26 mΩ | MountSMT | ||||
| WE-HCI SMT Flat Wire High Current Inductor, 1.8 µH, 22.1 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCI SMT Flat Wire High Current Inductor | Inductance1.8 µH | Performance Rated Current22.1 A | Saturation Current @ 10%7 A | Saturation Current @ 30%18 A | DC Resistance3.5 mΩ | Self Resonant Frequency70 MHz | MaterialSuperflux | – | DC Resistance3.85 mΩ | MountSMT | ||||
| WE-HCI SMT Flat Wire High Current Inductor, 2.2 µH, 10.2 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCI SMT Flat Wire High Current Inductor | Inductance2.2 µH | Performance Rated Current10.2 A | Saturation Current @ 10%5.6 A | Saturation Current @ 30%13 A | DC Resistance11.4 mΩ | Self Resonant Frequency52 MHz | MaterialSuperflux | – | DC Resistance12.54 mΩ | MountSMT |