Texas Instruments LMG1210 | Demoboard TIDA-01634

Description

This reference design implements a multi-MHz power stage design based on the LMG1210 half-bridge GaN driver and GaN power High Electron Mobility Transistors (HEMTs). With highly efficient switches and flexible dead-time adjustment, this design can significantly improve power density while achieving good efficiency as well as wide control bandwidth. This power stage design can be widely applied to many space-constrained and fast response required applications such as 5G telecom power, servers, and industrial power supplies.

Features

• Compact GaN-Based Power Stage Design With Switching up to 50 MHz
• Independent PWM inputs for high side and low side, or single PWM input with adjustable dead time
• Minimum pulse width of 3 ns
• High slew rate immunity of 300 V/ns
• Driver UVLO and overtermpertaure protection

Typical applications

• High-Speed DC-DC Converters / Class-E Wireless Charging
• RF Envelope Tracking
• Class-D Audio Amplifiers
• Server and Network Power Supplies

More information

• Datasheet
• IC product information