Topology | Power Factor Correction |
Input voltage | 85-265 V |
Output 1 | 387 V |
IC revision | 2 |
The Evaluation Board for a bridgeless totem-pole Power-Factor-Correction (PFC) circuit,using Transphorm GaN power HEMTs, is described in this application note. In this board, byusing a diode-free GaN power HEMT bridge with low reverse-recovery charge, very-highefficiencysingle-phase AC-DC conversion is realized. In this circuit, the performance andefficiency improvement, achieved by use of the GaN HEMTs in the fast-switching leg of thecircuit, is further enhanced by the use of low resistance MOSFETs in the slow-switching leg
Order Code | Datasheet | Simulation | Downloads | Status | Product series | Application | C | Safety Class | dV/dt (V/µs) | DF @ 1 kHz (%) | RISO | Operating Temperature | Pitch (mm) | Packaging | IR (A) | L (mH) | RDC max. (mΩ) | VR (V (AC)) | VT (V (AC)) | Material | L (mm) | W (mm) | H (mm) | Mount | Samples | |
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890324026030 | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | WCAP-FTX2 Film Capacitors | Across the mains | 1.5 µF | X2 | 140 | 0.1 | 6.67 GΩ | -40 °C up to +105 °C | 22.5 | Bulk | – | – | – | 275 | – | – | 26 | 10 | 21 | Boxed THT | |||
7448031501 | SPEC | 10 files | Active i| Production is active. Expected lifetime: >10 years. | WE-CMBNC Common Mode Power Line Choke Nanocrystalline | – | – | – | – | – | – | – | – | – | 15 | 1 | 3.2 | 300 | 2100 | Nanocrystalline | 24 | 17 | 25 | THT |
Order Code | Datasheet | Simulation | |
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890324026030 | SPEC | ||
7448031501 | SPEC |
Samples |
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Order Code | Datasheet | Simulation | Downloads | Status | Product series | Application | C | Safety Class | dV/dt (V/µs) | DF @ 1 kHz (%) | RISO | Operating Temperature | Pitch (mm) | Packaging | IR (A) | L (mH) | RDC max. (mΩ) | VR (V (AC)) | VT (V (AC)) | Material | L (mm) | W (mm) | H (mm) | Mount | Samples |
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