Characteristics
- Interwinding capacitance down to <1 pF
- Tiny surface mount EP7 package
- Dielectric insulation up to 4 kV AC
- Basic insulation for 568 Vrms / 800 Vpk
- Safety: IEC62368-1 / IEC61558-2-16
- AEC-Q200 Qualification
- Operating temperature: -40 °C up to +130 °C
- Common control voltages for SiC MOSFET’s
- High Common-mode Transient Immunity (CMTI)
- Flyback, LLC, Half-Bridge topologies
- Up to 6 W output power
- Wide range input voltages 6 V to 36 V
- Different unipolar and bipolar voltages
- High efficiency and very compact solution
- Reference designs with Analog Devices, Texas Instruments, and onsemi
Reference Designs
Applications
- Industrial drives
- AC motor inverters
- HEV/EV charging station
- Battery chargers
- Solar inverters
- Data centers
- Uninterruptible power supplies
- Active power factor correction
- SiC-MOSFET based power converter
Application Notes
Products
| Order Code | Datasheet | Simulation | Downloads | Status | VIN (V) | VOut1 (V) | VOut2 (V) | VOut3 (V) | Vaux (V) | PO (W) | CWW 1 (pF) | L (µH) | ISAT (A) | ∫Udt (Vµs) | fswitch (kHz) | n | Version | IC Reference | Reference Design | Samples |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 750319282 | SPEC | 7 files | Active i| Production is active. Expected lifetime: >10 years. | 6 - 18 | 20 | 5 | 5 | 5 | 1.5 | 6.4 | 42 | 1.2 | – | 150 | 1.56:3.89:1:1:1 | Flyback | NCV(P)3064 | Onsemi | ||
| 750319836 | SPEC | – | 7 files | New i| Product is new in our portfolio and production is active. Expected lifetime: >10 years. | 6 | 9 | – | – | – | – | 2 | 23 | – | 40 | 500 | 1:1.57 | LLC | UCC25800 | – | |
| 750318616 | SPEC | 7 files | Active i| Production is active. Expected lifetime: >10 years. | 7 - 31 | 27 | – | – | 13 | 2.7 | 3.25 | 10 | 2 | – | 400 | 1.2:2:1 | Flyback | STGAP4S | STMicroelectronics | ||
| 750319177 | SPEC | – | 7 files | Active i| Production is active. Expected lifetime: >10 years. | 7.5 | 13 | – | – | – | 4.55 | 0.68 | 16.5 | – | 36 | 500 | 1:1.67 | LLC | UCC25800 | Texas Instruments | |
| 750319834 | SPEC | – | 7 files | New i| Product is new in our portfolio and production is active. Expected lifetime: >10 years. | 7.5 | 7.5 | – | – | – | – | 2.6 | 67 | – | 70 | 500 | 1:1.08 | LLC | UCC25800 | Texas Instruments | |
| 750319835 | SPEC | – | 7 files | New i| Product is new in our portfolio and production is active. Expected lifetime: >10 years. | 7.5 | 9 | – | – | – | – | 2.1 | 23 | – | 40 | 500 | 1:1.29 | LLC | UCC25800 | Texas Instruments | |
| 750318131 | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | 9 - 18 | 15 | -4 | – | – | 6 | 7.5 | 7 | 5 | – | 350 | 2.25:3.5:1 | Flyback | LT8302 | Analog Devices | ||
| 750318114 | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | 9 - 18 | 19 | – | – | – | 6 | 6.8 | 6 | 6.2 | – | 350 | 1:2 | Flyback | LT8302 | Analog Devices | ||
| 750317894 | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | 9 - 18 | 15 | -4 | – | – | 3 | 7 | 18 | 1.6 | – | 350 | 2.25:3.5:1 | Flyback | LM5180 | Texas Instruments | ||
| 750317893 | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | 9 - 18 | 19 | – | – | – | 3 | 6.8 | 18 | 1.95 | – | 350 | 1:2 | Flyback | LM5180 | Texas Instruments | ||
| 750319497 | SPEC | 7 files | Active i| Production is active. Expected lifetime: >10 years. | 9 - 18 | 19 | 4 | – | – | 6 | 7.5 | 7 | 4.5 | – | 350 | 2.25:4.25:1 | Flyback | LT8302 | Analog Devices | ||
| 750319496 | SPEC | 7 files | Active i| Production is active. Expected lifetime: >10 years. | 9 - 18 | 20 | 5 | – | – | 6 | 7.3 | 7 | 4.5 | – | 350 | 1.8:3.6:1 | Flyback | LT8302 | Analog Devices | ||
| 750319077 | SPEC | 7 files | Active i| Production is active. Expected lifetime: >10 years. | 12 - 18 | 15 | 7.5 | 7.5 | 5 | 1.5 | 7.8 | 42 | 1.25 | – | 150 | 2:2.86:1.43:1.43:1 | Flyback | NCV(P)3064 | Onsemi | ||
| 750319331 | SPEC | – | 7 files | Active i| Production is active. Expected lifetime: >10 years. | 13 | 11.5 | – | – | – | 6 | 1.3 | 50 | – | 60 | 500 | 1:1 | LLC | UCC25800 | Texas Instruments | |
| 750319565 | SPEC | – | 7 files | Active i| Production is active. Expected lifetime: >10 years. | 15 | 30 | – | – | – | 3 | 2.1 | 256 | – | 72 | 250 | 1:2 | Half-Bridge | – | – | |
| 750319831 | SPEC | – | 7 files | New i| Product is new in our portfolio and production is active. Expected lifetime: >10 years. | 15 | 6 | – | – | – | – | 2 | 56 | – | 64 | 500 | 2.2:1 | LLC | UCC25800 | Texas Instruments | |
| 750319832 | SPEC | – | 7 files | New i| Product is new in our portfolio and production is active. Expected lifetime: >10 years. | 15 | 7.5 | – | – | – | – | 2 | 56 | – | 64 | 500 | 1.83:1 | LLC | UCC25800 | Texas Instruments | |
| 750319833 | SPEC | – | 7 files | New i| Product is new in our portfolio and production is active. Expected lifetime: >10 years. | 15 | 12 | – | – | – | – | 2 | 67 | – | 70 | 500 | 1.2:1 | LLC | UCC25800 | Texas Instruments | |
| 750318208 | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | 18 - 36 | 15 | -4 | – | – | 5 | 7 | 27 | 1.5 | – | 350 | 3.5:3.5:1 | Flyback | LM5180 | Texas Instruments | ||
| 750318207 | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | 18 - 36 | 19 | – | – | – | 5 | 8.2 | 27 | 2 | – | 350 | 1:1.2 | Flyback | LM5180 | Texas Instruments |
| Order Code | Datasheet | Simulation |
|---|---|---|
| 750319282 | SPEC | |
| 750319836 | SPEC | – |
| 750318616 | SPEC | |
| 750319177 | SPEC | – |
| 750319834 | SPEC | – |
| 750319835 | SPEC | – |
| 750318131 | SPEC | |
| 750318114 | SPEC | |
| 750317894 | SPEC | |
| 750317893 | SPEC | |
| 750319497 | SPEC | |
| 750319496 | SPEC | |
| 750319077 | SPEC | |
| 750319331 | SPEC | – |
| 750319565 | SPEC | – |
| 750319831 | SPEC | – |
| 750319832 | SPEC | – |
| 750319833 | SPEC | – |
| 750318208 | SPEC | |
| 750318207 | SPEC |
| Samples |
|---|
| Order Code | Datasheet | Simulation | Downloads | Status | VIN (V) | VOut1 (V) | VOut2 (V) | VOut3 (V) | Vaux (V) | PO (W) | CWW 1 (pF) | L (µH) | ISAT (A) | ∫Udt (Vµs) | fswitch (kHz) | n | Version | IC Reference | Reference Design | Samples |
|---|
Impact of Interwinding Capacitance
Importance of minimizing displacement current / common-mode current
SiC-MOSFETs can switch extremely fast, causing very high rates of rise and fall of voltage (dv/dt) across the device terminals and in turn, across the isolation barrier parasitic capacitances, which are a contribution of the transformer in the auxiliary supply (Ciso-xfmr) and the gate driver IC controller or digital isolator used (Ciso-drv).
As a result, common-mode displacement currents are generated which, if high enough, may cause loss of control of the SiC-MOSFET device as well as EMI issues, since high dv/dt also appears across PCB nodes and Earth/Chassis. The lower the parasitic capacitance, the lower the displacement currents generated, helping to prevent such issues.
Compared to regular transformers
The WE-AGDT transformers have been engineered with extremely-low interwinding capacitance in order to help the application withstand higher switching speeds (dv/dt), and with it to achieve higher efficiency as well as a smaller solution size and lower system cost.
Compared to regular, same-sized transformers, the WE-AGDT feature less than half of the parasitic capacitance, as required by state-of-the-art SiC-MOSFET and IGBT applications.
Reference Designs
SiC Gate Driver System
One of the main applications of high-voltage SiC-MOSFETs and IGBTs is in high-power AC inverters and AC-Motor drives. Such power stages are built by ‘paralleling’ several half-bridge configurations of SiC devices in order to generate the different phase currents and voltages for the load.
Each of the SiC-MOSFET devices typically has its own isolated gate driver system formed by the gate driver IC and the auxiliary supply (e.g. Würth Elektronik RD001 reference design with WE-AGDT).
A simplified schematic of an example application of a 3-phase inverter formed by three half-bridge stages paralleled and six SiC-MOSFET devices in total is shown in the image, in addition to a detail connection of the isolated auxiliary supply, isolated gate driver IC and the corresponding SiC-MOSFET device.
Applications
Products of interest
Videos
WE meet @ Digital Days 2020: SiC Gate Driver Systems with WE-AGDT series