850 nm, 845.0, 85 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 85 mW/sr
Forward Voltage [typ.] 1.5 V
Viewing Angle Phi 0° [typ.] 35 °
Chip Technology AlGaAs
850 nm, 845.0, 60 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 60 mW/sr
Forward Voltage [typ.] 1.5 V
Viewing Angle Phi 0° [typ.] 35 °
Chip Technology AlGaAs
850 nm, 845.0, 2 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 2 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 130 °
Chip Technology AlGaAs
850 nm, 845.0, 20 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 20 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 30 °
Chip Technology AlGaAs
850 nm, 845.0, 2 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 2 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 130 °
Chip Technology AlGaAs
850 nm, 845.0, 9 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 9 mW/sr
Forward Voltage [typ.] 1.5 V
Viewing Angle Phi 0° [typ.] 120 °
Chip Technology AlGaAs
850 nm, 845.0, 5 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 5 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 90 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 5 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 5 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 110 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 11 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 11 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 45 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 6 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 6 mW/sr
Forward Voltage [typ.] 1.6 V
Viewing Angle Phi 0° [typ.] 140 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 1.5 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 1.5 mW/sr
Forward Voltage [typ.] 1.6 V
Viewing Angle Phi 0° [typ.] 140 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 12 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 12 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 20 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 20 mW/sr Simulation –
Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 20 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 30 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 1.2 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 1.2 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 140 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 1.5 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 1.5 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 140 °
Chip Technology AlGaAs
Design Kit –
850 nm, 850.0, 2.5 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 850.0
Radiant Intensity [typ.] 2.5 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 140 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 60 mW/sr Simulation –
Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 60 mW/sr
Forward Voltage [typ.] 1.5 V
Viewing Angle Phi 0° [typ.] 30 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 85 mW/sr Simulation –
Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 85 mW/sr
Forward Voltage [typ.] 1.5 V
Viewing Angle Phi 0° [typ.] 30 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 160 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 160 mW/sr
Forward Voltage [typ.] 1.8 V
Viewing Angle Phi 0° [typ.] 120 °
Chip Technology AlInGaAs
Design Kit –
850 nm, 845.0, 350 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 350 mW/sr
Forward Voltage [typ.] 3.2 V
Viewing Angle Phi 0° [typ.] 120 °
Chip Technology AlInGaAs
Design Kit –
850 nm, 845.0, 400 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 400 mW/sr
Forward Voltage [typ.] 1.8 V
Viewing Angle Phi 0° [typ.] 90 °
Chip Technology InAlGaAs
Design Kit –
850 nm, 845.0, 800 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 800 mW/sr
Forward Voltage [typ.] 3.2 V
Viewing Angle Phi 0° [typ.] 90 °
Chip Technology InAlGaAs
Design Kit –
850 nm, 855.0, 260 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 855.0
Radiant Intensity [typ.] 260 mW/sr
Forward Voltage [typ.] 3.2 V
Viewing Angle Phi 0° [typ.] 150 °
Chip Technology InAlGaAs
Design Kit –
850 nm, 855.0, 180 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 855.0
Radiant Intensity [typ.] 180 mW/sr
Forward Voltage [typ.] 1.8 V
Viewing Angle Phi 0° [typ.] 150 °
Chip Technology InAlGaAs
Design Kit –
850 nm, 845.0, 150 mW/sr Simulation –
Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 150 mW/sr
Forward Voltage [typ.] 1.5 V
Viewing Angle Phi 0° [typ.] 30 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 60 mW/sr Simulation –
Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 60 mW/sr
Forward Voltage [typ.] 1.5 V
Viewing Angle Phi 0° [typ.] 60 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 40 mW/sr Simulation –
Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 40 mW/sr
Forward Voltage [typ.] 1.5 V
Viewing Angle Phi 0° [typ.] 120 °
Chip Technology AlGaAs
Design Kit –
850 nm, 845.0, 5 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 850 nm
Centroid Wavelength [max.] 845.0
Radiant Intensity [typ.] 5 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 60 °
Chip Technology AlGaAs
Design Kit –
855 nm, 850.0, 350 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 855 nm
Centroid Wavelength [max.] 850.0
Radiant Intensity [typ.] 350 mW/sr
Forward Voltage [typ.] 2 V
Viewing Angle Phi 0° [typ.] 90 °
Chip Technology AlGaAs
855 nm, 850.0, 250 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 855 nm
Centroid Wavelength [max.] 850.0
Radiant Intensity [typ.] 250 mW/sr
Forward Voltage [typ.] 2 V
Viewing Angle Phi 0° [typ.] 130 °
Chip Technology AlGaAs
940 nm, 940.0, 75 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 75 mW/sr
Forward Voltage [typ.] 1.3 V
Viewing Angle Phi 0° [typ.] 35 °
Chip Technology AlGaAs
940 nm, 940.0, 30 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 30 mW/sr
Forward Voltage [typ.] 1.3 V
Viewing Angle Phi 0° [typ.] 35 °
Chip Technology AlGaAs
940 nm, 940.0, 1 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 1 mW/sr
Forward Voltage [typ.] 1.2 V
Viewing Angle Phi 0° [typ.] 150 °
Chip Technology AlGaAs
940 nm, 940.0, 5 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 5 mW/sr
Forward Voltage [typ.] 1.2 V
Viewing Angle Phi 0° [typ.] 30 °
Chip Technology AlGaAs
940 nm, 940.0, 0.8 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 0.8 mW/sr
Forward Voltage [typ.] 1.2 V
Viewing Angle Phi 0° [typ.] 150 °
Chip Technology AlGaAs
940 nm, 940.0, 8 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 8 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 120 °
Chip Technology AlGaAs
940 nm, 940.0, 5.5 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 5.5 mW/sr
Forward Voltage [typ.] 1.2 V
Viewing Angle Phi 0° [typ.] 90 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 1.5 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 1.5 mW/sr
Forward Voltage [typ.] 1.2 V
Viewing Angle Phi 0° [typ.] 150 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 6 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 6 mW/sr
Forward Voltage [typ.] 1.2 V
Viewing Angle Phi 0° [typ.] 60 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 5 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 5 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 140 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 1 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 1 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 140 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 6 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 6 mW/sr
Forward Voltage [typ.] 1.2 V
Viewing Angle Phi 0° [typ.] 20 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 5 mW/sr Simulation –
Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 5 mW/sr
Forward Voltage [typ.] 1.2 V
Viewing Angle Phi 0° [typ.] 30 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 1 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 1 mW/sr
Forward Voltage [typ.] 1.2 V
Viewing Angle Phi 0° [typ.] 140 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 1 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 1 mW/sr
Forward Voltage [typ.] 1.2 V
Viewing Angle Phi 0° [typ.] 140 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 1 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 1 mW/sr
Forward Voltage [typ.] 1.2 V
Viewing Angle Phi 0° [typ.] 140 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 30 mW/sr Simulation –
Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 30 mW/sr
Forward Voltage [typ.] 1.3 V
Viewing Angle Phi 0° [typ.] 30 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 30 mW/sr Simulation –
Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 30 mW/sr
Forward Voltage [typ.] 1.3 V
Viewing Angle Phi 0° [typ.] 30 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 120 mW/sr Simulation –
Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 120 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 30 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 50 mW/sr Simulation –
Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 50 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 60 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 30 mW/sr Simulation –
Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 30 mW/sr
Forward Voltage [typ.] 1.4 V
Viewing Angle Phi 0° [typ.] 120 °
Chip Technology AlGaAs
Design Kit –
940 nm, 940.0, 2 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 940 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 2 mW/sr
Forward Voltage [typ.] 1.2 V
Viewing Angle Phi 0° [typ.] 60 °
Chip Technology AlGaAs
Design Kit –
945 nm, 940.0, 300 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 945 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 300 mW/sr
Forward Voltage [typ.] 1.9 V
Viewing Angle Phi 0° [typ.] 90 °
Chip Technology AlGaAs
945 nm, 940.0, 220 mW/sr Status Active i | Production is active. Expected lifetime: >10 years.
Peak Wavelength [typ.] 945 nm
Centroid Wavelength [max.] 940.0
Radiant Intensity [typ.] 220 mW/sr
Forward Voltage [typ.] 1.9 V
Viewing Angle Phi 0° [typ.] 130 °
Chip Technology AlGaAs