| Topology | Flyback Converter |
| Input voltage | 400-690 V |
| Output 1 | 24 V / 1 A |
| IC revision | Rev. A |
The BD768xFJ-LB series are Quasi-Resonant switchingAC/DC converter for driving SiC (Silicon Carbide)–MOSFET.Using external switching MOSFET and current detection resistors provides a lot of flexibility in the design.Power efficiency is improved by the burst function and the reduction of switching frequency under light load conditions. This is the product that guarantees long time support in the Industrial market.
Quasi-resonant method (Maximum frequency control 120kHz)/Current modeLow power when load is light ( Burst operation) / Frequency reduction functionVCC pin : under voltage protection / overvoltage protectionLeading-Edge-Blanking functionOver-current protection (cycle-by-cycle)ZT trigger mask functionZT Over voltage protectionAC voltage correction functionSoft startBrown IN/OUT functionGate Clamp circuitMASK Function
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L(µH) | IRP,40K(A) | ISAT(A) | RDC max.(Ω) | Material | Q(%) | fres(MHz) | Mount | IR(A) | ISAT,10%(A) | Version | Samples | |
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![]() | WE-TI Radial Leaded Wire Wound Inductor, 2.2 µH, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-TI Radial Leaded Wire Wound Inductor | Inductance2.2 µH | – | Saturation Current4.3 A | DC Resistance0.02 Ω | – | – | Self Resonant Frequency65 MHz | MountTHT | Rated Current6.3 A | Saturation Current @ 10%5.7 A | VersionHeat Shrinking Tube | ||||
![]() | WE-GF SMT Wire Wound Inductor, 680 µH, 0.15 A | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-GF SMT Wire Wound Inductor | Inductance680 µH | Performance Rated Current0.15 A | – | DC Resistance30 Ω | – | Q-Factor30 % | Self Resonant Frequency3 MHz | MountSMT | Rated Current0.05 A | – | – | |||
![]() | WE-TI HV Radial Leaded Wire Wound Inductor (High Voltage), 1000 µH, – | Status Activei| Production is active. Expected lifetime: >10 years. | Inductance1000 µH | – | Saturation Current0.55 A | DC Resistance2.08 Ω | MaterialNiZn | – | Self Resonant Frequency1.8 MHz | MountTHT | Rated Current0.5 A | Saturation Current @ 10%0.55 A | VersionStandard |