IC manufacturers Tagore Tech
IC manufacturers (99)
- All manufacturers
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (27)
- Ablic (23)
- Advanced Power (4)
- Allegro Microsystems (84)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (172)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (47)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (238)
- Divimath (8)
- Elmos AG (1)
- EPC (99)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (7)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- Ikanos (3)
- IKON (1)
- Indie Semiconductor (5)
- Innovision Semiconductor Inc (2)
- Intel (80)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (2)
- Kinetic Technology (10)
- Lattice semiconductor Corporation (19)
- Littelfuse (1)
- M3 Technology (M3Tek) (7)
- Macnica (16)
- MaxLinear (175)
- MikroE (8)
- MindCet (2)
- Monolithic Power Systems (929)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (32)
- Nisshinbo Micro Device Inc. (10)
- Nordic Semiconductor (1)
- Novosense Micro (1)
- NXP (314)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (110)
- Pulsiv (19)
- Qorvo (87)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (296)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (90)
- SG-Micro (33)
- Silanna Semiconductor (8)
- Silergy Corporation (30)
- Silicon Laboratory Inc. (104)
- Silicontent Technology (57)
- Silvertel (56)
- Skycore Semiconductors (1)
- Skyworks (31)
- Southchip (8)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (18)
- Wise Integration (1)
- Wolfspeed (8)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Overview
| Topology | Other Topology |
| IC revision | 1.0 |
Description
The TP44100SG-TPPFC520-EVB is a highly efficient single phase Totem Pole PFC (TP-PFC) solution, which is built using the advantages of Tagore Technology’s Superior GaN HEMT TP44100SG. The EVBcan operate over the universal input ac voltage range (90 V to 265 V) providing output power up to 520W with efficiency more than 98%. Such high efficiency cannot be achieved using a standard Boost PFC due to high power loss in the Diode Bridge Rectifier (DBR) at its input. The Totem Pole PFC topology replaces the inefficient diodes bridge with semiconductor switches. Tagore Technology’s “Enhancement Mode High Electron Mobility GaN Transistors (E-HEMTs) with ESD protection” parts have very low output charge (Qoss), while the reverse recovery charge (Qrr) is completely absent. These advantages of Tagore Technology’s Superior GaN part TP44100SG are leveraged here to design this TP-PFC solution with low switching loss and enhanced efficiency.
Typical applications
- Charger
More information
Products
| Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | Size | Operating Temperature | Qmin. | DF (%) | RISO | Ceramic Type | Fl (mm) | Packaging | IR (mA) | IR 2 (mA) | ISAT (mA) | RDC (mΩ) | fres (MHz) | Type | Endurance (h) | IRIPPLE (mA) | Z (mΩ) | ILeak (µA) | Ø D (mm) | IR (A) | L (mH) | RDC max. (mΩ) | VR (V (DC)) | VT (V (AC)) | Material | L (mm) | W (mm) | H (mm) | Mount | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 885342214001 | SPEC | 7 files | Active i| Production is active. Expected lifetime: >10 years. | WCAP-CSMH Mid and High Voltage | 1 µF | ±10% | 2220 | -55 °C up to +125 °C | – | 2.5 | 0.1 GΩ | X7R Class II | 0.85 | 7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | 630 | – | – | 5.7 | 2.8 | 5 | – | ||
 | 865080545012 | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | WCAP-ASLI Aluminum Electrolytic Capacitors | 100 µF | ±20% | 6.3 x 7.7 | -55 °C up to +105 °C | – | 14 | 1 MΩ | – | – | 15" Tape & Reel | – | – | – | – | – | – | 2000 | 300 | 380 | 35 | 6.3 | – | – | – | 35 | – | – | 7.7 | 6.6 | – | V-Chip SMT | ||
 | 7448040435 | SPEC | 10 files | Active i| Production is active. Expected lifetime: >10 years. | WE-CMBNC Common Mode Power Line Choke Nanocrystalline | – | – | L | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | 3.5 | 35 | 80 | 300 | 2100 | Nanocrystalline | 27.5 | 18 | 32 | THT | ||
 | 7448227005 | SPEC | 9 files | Active i| Production is active. Expected lifetime: >10 years. | WE-CMB HC Common Mode Power Line Choke | – | – | Type S | -40 °C up to +125 °C | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | 6.5 | 0.45 | 10 | 250 | 1500 | MnZn | 18.5 | 14.5 | 22 | THT | ||
 | 7447055 | SPEC | – | 6 files | Active i| Production is active. Expected lifetime: >10 years. | WE-FI Leaded Toroidal Line Choke | – | – | – | -40 °C up to +105 °C | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | 5.4 | 0.15 | 42 | – | – | – | 26 | 13 | – | THT | |
 | 74479775247 | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | WE-PMI Power Multilayer Inductor | – | – | 0805 | -40 °C up to +125 °C | 25 | – | – | – | – | – | 600 | 850 | 250 | 250 | 30 | Low RDC | – | – | – | – | – | – | 0.0047 | 312.5 | – | – | – | 2 | 1.2 | 1 | SMT |
| Order Code | Datasheet | Simulation | |
|---|---|---|---|
| 885342214001 | SPEC | |
| 865080545012 | SPEC | |
| 7448040435 | SPEC | |
| 7448227005 | SPEC | |
| 7447055 | SPEC | – |
| 74479775247 | SPEC |
| Samples |
|---|
| Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | Size | Operating Temperature | Qmin. | DF (%) | RISO | Ceramic Type | Fl (mm) | Packaging | IR (mA) | IR 2 (mA) | ISAT (mA) | RDC (mΩ) | fres (MHz) | Type | Endurance (h) | IRIPPLE (mA) | Z (mΩ) | ILeak (µA) | Ø D (mm) | IR (A) | L (mH) | RDC max. (mΩ) | VR (V (DC)) | VT (V (AC)) | Material | L (mm) | W (mm) | H (mm) | Mount | Samples |
|---|