IC manufacturers Xilinx

IC manufacturers (103)

Xilinx XCZU9EG-2FFVB1156 | Demoboard ZCU102 Evaluation Kit

ZCU102 Evaluation Board

Overview

TopologyFPGA
IC revision1.0

Description

The ZCU102 Evaluation Kit enables designers to jumpstart designs for Automotive, Industrial, Video and Communications applications. This kit features a Zynq UltraScale+™ MPSoC device with a quad-core ARM® Cortex-A53, dual-core Cortex-R5 real-time processors, and a Mali-400 MP2 graphics processing unit based on Xilinx's 16nm FinFET+ programmable logic fabric. The ZCU102 supports all major peripherals and interfaces enabling development for a wide range of applications.

Features

XCZU9EG-2FFVB1156I MPSoC

  • PL VCCINT for range in datasheet
  • Form factor for PCIe Gen2x4 Host, Micro-ATX chassis footprint
  • Configuration from QSPI
  • Configuration from SD card
  • Configuration over JTAG with PC4 header
  • Configuration over JTAG with ARM 20-pin header
  • Configuration over USB-to-JTAG Bridge
  • Clocks (PL-system, PS_CLK, Programmable Clock, SMA, SMA_GT_REF, Ethernet, USB)
  • PS DDR4 64-bit SODIMM w/ ECC
  • PL DDR4 Component (16-bit)
  • PS GTR assignment° SATA° DisplayPort° USB3° PCIe Gen2x4 Root Port
  • PL GTH assignment° FMC #1 (8 GTH) and FMC #2 (8 GTH) PL GT assignment° HDMI (3 GTH) PL GT assignment° SFP+ (4 GTH) PL GT assignment° SMA (1 GTH) PL GT assignment
  • PL FMC HPC #1 Connectivity - Full LA Bus
  • PL FMC HPC #2 Connectivity - Partial LA Bus
  • PS MIO: QSPI
  • PS MIO: Ethernet
  • PS MIO: USB2 (same connector as USB3)
  • PS MIO: SD

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
L(nH)
IR(mA)
IR 2(mA)
ISAT(A)
RDC(mΩ)
fres(MHz)
Type
H(mm)
W(mm)
IR(A)
RDC max.(mΩ)
VT(V (RMS))
Material
Version
Qmin.
LR(nH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
Data rate
PoE
Ports
Tab
Improved CMRR
Operating Temperature
LED
PHY Chip Mode
Mount
Shield Tabs
Samples
WE-HCM SMT High Current Flat Wire Inductor, 150 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance150 nH
DC Resistance0.37 mΩ
Self Resonant Frequency60 MHz
Height6.8 mm
Width7 mm
Rated Current25 A
MaterialMnZn 
Rated Inductance150 nH
Performance Rated Current54.3 A
Saturation Current @ 10%53.8 A
Saturation Current @ 30%60.7 A
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-HCM SMT High Current Flat Wire Inductor, 200 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance200 nH
DC Resistance0.37 mΩ
Self Resonant Frequency45 MHz
Height6.8 mm
Width7 mm
Rated Current25 A
MaterialMnZn 
Rated Inductance198 nH
Performance Rated Current54.3 A
Saturation Current @ 10%44 A
Saturation Current @ 30%50.4 A
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-HCM SMT High Current Flat Wire Inductor, 250 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance250 nH
DC Resistance0.165 mΩ
Self Resonant Frequency37 MHz
Height9 mm
Width13 mm
Rated Current47.5 A
MaterialMnZn 
Rated Inductance245 nH
Performance Rated Current76.6 A
Saturation Current @ 10%75.6 A
Saturation Current @ 30%88.5 A
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-HCI SMT Flat Wire High Current Inductor, 470 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance470 nH
DC Resistance2.75 mΩ
Self Resonant Frequency280 MHz
Height4 mm
Width5.3 mm
DC Resistance3.025 mΩ
MaterialSuperflux 
VersionSMT 
Rated Inductance340 nH
Performance Rated Current19.5 A
Saturation Current @ 10%8 A
Saturation Current @ 30%16 A
Operating Temperature -40 °C up to +150 °C
MountSMT 
WE-LHMI SMT Power Inductor, 470 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance470 nH
Saturation Current31 A
Self Resonant Frequency91 MHz
Height2.8 mm
Width6.6 mm
Rated Current11.5 A
DC Resistance4.2 mΩ
VersionSMT 
Performance Rated Current16.6 A
Saturation Current @ 10%21.4 A
Saturation Current @ 30%37.8 A
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-HCC SMT High Current Cube Inductor, 680 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance680 nH
Self Resonant Frequency108 MHz
Height9.5 mm
Width11.4 mm
Rated Current26 A
DC Resistance1.85 mΩ
MaterialFerrite 
VersionSMT 
Rated Inductance660 nH
Performance Rated Current40.2 A
Saturation Current @ 10%35.8 A
Saturation Current @ 30%39.1 A
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-LHMI SMT Power Inductor, 680 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance680 nH
Self Resonant Frequency90 MHz
Height1.8 mm
Width5.2 mm
DC Resistance12.4 mΩ
Performance Rated Current9.4 A
Saturation Current @ 10%9.8 A
Saturation Current @ 30%17.8 A
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-HCI SMT Flat Wire High Current Inductor, 1150 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance1150 nH
DC Resistance8.6 mΩ
Self Resonant Frequency84 MHz
Height3 mm
Width6.9 mm
DC Resistance9.46 mΩ
MaterialSuperflux 
VersionSMT 
Rated Inductance1000 nH
Performance Rated Current11.8 A
Saturation Current @ 10%7.5 A
Saturation Current @ 30%13 A
Operating Temperature -40 °C up to +150 °C
MountSMT 
WE-LHMI SMT Power Inductor, 1500 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance1500 nH
Self Resonant Frequency35 MHz
Height4.8 mm
Width6.6 mm
DC Resistance9 mΩ
VersionSMT 
Performance Rated Current11.3 A
Saturation Current @ 10%9.7 A
Saturation Current @ 30%18.7 A
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-HCI SMT Flat Wire High Current Inductor, 2000 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance2000 nH
DC Resistance14.2 mΩ
Self Resonant Frequency58 MHz
Height3 mm
Width6.9 mm
DC Resistance15.62 mΩ
MaterialSuperflux 
VersionSMT 
Rated Inductance1550 nH
Performance Rated Current8.7 A
Saturation Current @ 10%3 A
Saturation Current @ 30%9 A
Operating Temperature -40 °C up to +150 °C
MountSMT 
WE-SPC SMT Power Inductor, 2200 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance2200 nH
Saturation Current3.6 A
Self Resonant Frequency65 MHz
Height1.8 mm
Width4.8 mm
Rated Current2.1 A
DC Resistance66 mΩ
VersionSMT 
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-LHMI SMT Power Inductor, 2200 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance2200 nH
Self Resonant Frequency49 MHz
Height1.8 mm
Width4.06 mm
DC Resistance61 mΩ
Performance Rated Current4.05 A
Saturation Current @ 10%4.45 A
Saturation Current @ 30%8.4 A
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-PD2SR Power Inductor, 3900 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance3900 nH
Saturation Current4 A
Self Resonant Frequency45 MHz
Height4.8 mm
Width7 mm
Rated Current3.8 A
DC Resistance20 mΩ
VersionSMT 
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-PMI Power Multilayer Inductor, 10000 nH, 600 mA
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance10000 nH
Rated Current600 mA
Rated Current 2850 mA
Saturation Current0.125 A
DC Resistance300 mΩ
Self Resonant Frequency20 MHz
TypeHigh Saturation Current 
Height0.8 mm
Width2 mm
DC Resistance390 mΩ
VersionSMT 
Q-Factor [1]27 
Operating Temperature -40 °C up to +125 °C
MountSMT 
WE-RJ45 LAN Transformer, 350000 nH, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Inductance350000 nH
Height13.9 mm
Width16.79 mm
Insulation Test Voltage1500 V (RMS)
VersionTHT 
Data rate1000BASE-T 
PoEnon-PoE 
Ports
Tab PositionUp 
Improved Common Mode RejectionNo 
Operating Temperature 0 °C up to +70 °C
LED (Left-Right)green-green 
PHY Chip Modecurrent & voltage 
MountTHT 
Shield TabsYes