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Overview
| Topology | Power Factor Correction |
| Input voltage | 90-253 V |
| Output 1 | 390 V |
| IC revision | 2.0 |
Description
Nowadays, in PFC for servers and telecom (for example, PSU for 5G base stations, grid connected smart systems) theachievement of an efficiency >99% is becoming mandatory. The demand for very high efficiency has a strong impact ontopologies, design parameters, materials, and control strategies.The STEVAL-TTPPFC01 offers a very high flat efficiency PFC solution in a full digital three-channel interleaved totem poletopology. A conversion efficiency of 99.3% is obtained using ST MDmesh DM6 superjunction power MOSFETs, as well as avery high power factor and low THDi. The PFC operates in the zero voltage switching (ZVS) resonant mode with hysteresiscurrent control, which is fully implemented in the STM32G474QE microcontroller, thanks to the integrated DACs, fastcomparators, and high-resolution timer peripheral HRTIM, to ensure a high dynamic and precise cycle-by-cycle current control.The STEVAL-TTPPFC01 evaluation kit is a modular solution, which consists of: a power board, which contains all the mainpassive devices and all the daughter boards plug connectors; a control board, which embeds the STM32G474QEmicrocontroller; an auxiliary power supply board, which generates all the voltages for driving, sensing, MCU, etc.; three highfrequencyhalf-bridge boards; a low-frequency half-bridge board.
Features
The STEVAL-TTPPFC01 incorporates the following design features to achieve above 99% efficiency:
- Bridgeless topology: the large input bridge losses of conventional PFCs (diode forward voltage losses)are dramatically reduced thanks to the use of active switches for the mains rectification function (Rds (on)losses in a MOSFET).
- Interleaved architecture: thanks to the phase shedding (enabling/disabling the parallel channels basingon the load requirement) the light load efficiency is improved and a flat efficiency over the whole load rangeis obtained. Moreover, the superposition of the inductor currents of each boost cell results in a smoothmains current waveform (EMI filter and inductors volume reduction) and output capacitor loss reduction(lower equivalent inductor current ripple).
- Zero voltage switching (ZVS) resonant technique: eliminates the turn-on losses of the power switchesover the full mains period to further improve converter efficiency.
Typical applications
- Datacenter
- Power Supply and converters
More information
Products
| Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | Size | Operating Temperature | Safety Class | VIMP (V (DC)) | DF (%) | RISO | Ceramic Type | Packaging | VR 2 (V (DC)) | dV/dt (V/µs) | DF @ 1 kHz (%) | Operating Temperature | Pitch (mm) | Application | Z @ 100 MHz (Ω) | IR (A) | RDC max. (mΩ) | Z @ 25 MHz (Ω) | Fl (mm) | L (mm) | W (mm) | H (mm) | L (mH) | VR (V (AC)) | VT (V (AC)) | Material | Mount | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 8853522130151 | SPEC PCN pendingDue to a pending PCN, a modification of the component will be implemented soon. Please find the PCN below. If you have further questions please get in contact with our sales staff. | 6 files | Active i| Production is active. Expected lifetime: >10 years. | WCAP-CSSA Interference Suppression | 2.2 nF | ±10% | 2211 | -55 °C up to +125 °C | X1 / Y2 | 5000 | 2.5 | 10 GΩ | X7R Class II | 7" Tape & Reel | 3000 | – | – | – | – | – | – | – | – | – | 0.6 | 5.7 | 2.8 | 2.5 | – | 250 | – | – | SMT-Chip | ||
 | 890324024005 | SPEC | 7 files | Active i| Production is active. Expected lifetime: >10 years. | WCAP-FTX2 Film Capacitors | 470 nF | ±10% | Pitch 12.5 mm | -40 °C up to +105 °C | X2 | – | – | 21.28 GΩ | – | Bulk | 630 | 280 | 0.1 | -40 °C up to +105 °C | 12.5 | Across the mains | – | – | – | – | – | 15 | 10 | 16 | – | 275 | – | – | Boxed THT | ||
 | 890273325009CS | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | WCAP-FTBP Film Capacitors | 1 µF | ±5% | Pitch 15 mm | -40 °C up to +105 °C | – | – | – | 10 GΩ | – | Carton | – | 85 | 0.1 | -40 °C up to +105 °C | 15 | – | – | – | – | – | – | 18 | 7 | 13 | – | 250 | – | – | – | ||
| 890324027025 | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | WCAP-FTX2 Film Capacitors | 3.3 µF | ±10% | Pitch 22.5 mm | -40 °C up to +105 °C | X2 | – | – | 3.03 GΩ | – | Bulk | 630 | 130 | 0.1 | -40 °C up to +105 °C | 27.5 | Across the mains | – | – | – | – | – | 31 | 15.5 | 29 | – | 275 | – | – | Boxed THT | ||
 | 7427512 | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | WE-SUKW SMT EMI Suppression 5-Hole Ferrite Bead | – | – | – | -55 °C up to +125 °C | – | – | – | – | – | – | – | – | – | -40 °C up to +125 °C | – | – | 580 | 8.5 | 12 | 425 | 2 | 11 | 5 | 4.65 | – | – | – | 5 W 700 | SMT | ||
 | 7448051804 | SPEC | 10 files | Active i| Production is active. Expected lifetime: >10 years. | WE-CMBNC Common Mode Power Line Choke Nanocrystalline | – | – | XL | -55 °C up to +125 °C | – | – | – | – | – | – | – | – | – | – | – | – | – | 18 | 4.2 | – | – | 36 | 23 | 34 | 4.5 | 300 | 2100 | Nanocrystalline | THT | ||
 | 7448421016 | SPEC | 6 files | Active i| Production is active. Expected lifetime: >10 years. | WE-CMB NiZn Common Mode Power Line Choke | – | – | S | -40 °C up to +125 °C | – | – | – | – | – | – | – | – | – | -40 °C up to +125 °C | – | – | – | 10 | 3 | – | – | 18.5 | 14.5 | 22 | 0.016 | 250 | 1500 | NiZn | THT |
| Order Code | Datasheet | Simulation | |
|---|---|---|---|
| 8853522130151 | SPEC PCN pendingDue to a pending PCN, a modification of the component will be implemented soon. Please find the PCN below. If you have further questions please get in contact with our sales staff. | |
| 890324024005 | SPEC | |
| 890273325009CS | SPEC | |
| 890324027025 | SPEC | |
| 7427512 | SPEC | |
| 7448051804 | SPEC | |
| 7448421016 | SPEC |
| Samples |
|---|
| Order Code | Datasheet | Simulation | Downloads | Status | Product series | C | Tol. C | Size | Operating Temperature | Safety Class | VIMP (V (DC)) | DF (%) | RISO | Ceramic Type | Packaging | VR 2 (V (DC)) | dV/dt (V/µs) | DF @ 1 kHz (%) | Operating Temperature | Pitch (mm) | Application | Z @ 100 MHz (Ω) | IR (A) | RDC max. (mΩ) | Z @ 25 MHz (Ω) | Fl (mm) | L (mm) | W (mm) | H (mm) | L (mH) | VR (V (AC)) | VT (V (AC)) | Material | Mount | Samples |
|---|