IC manufacturers Texas Instruments

IC manufacturers (99)

Texas Instruments LM76003 | Demoboard TIDA-01606

10-kW, Bidirectional Three-Phase Three-Level (T-type) Inverter

Overview

TopologyPositive to Negative Converter
Input voltage600-1000 V
Output 1400 V / 18 A

Description

This reference design provides an overview on how to implement a bidirectional three-level, three-phase, SiC-based active front end (AFE) inverter and PFC stage. The design uses a switching frequency of 50kHz and a LCL output filter to reduce the size of the magnetics. A peak efficiency of 99% is achieved.The design shows how to implement a complete three phase AFE control in the DQ domain. The control and software is validated on the actual hardware and onhardware in the loop (HIL) setup.

Features

  • Rated nominal and maximum input voltage at 800-V and 1000-V DC, Max Power 10-kW/10-kVA at 400-V AC L-L 50 or 60 Hz
  • Compact output LCL filter with switching frequency of 50 kHz
  • < 2% output current THD at full load
  • Isolated driver ISO5852S with reinforced isolation for driving high-voltage SiC MOSFET and UCC5320S for driving middle Si IGBT
  • Isolated current sensing using AMC1301 for load current monitoring
  • TMS320F28379D control card for digital control with Trignometric Math Unit (TMU) to accelerate PLL computation, comparator sub-system for protection implementation and Control Law Accelerator (CLA) to offload the control loops to the co-processor.

Typical applications

  • String inverter, Central inverter, On-board (OBC) and wireless charger, DC charging (pile) station, Portable DC charger, Energy storage power conversion system (PCS)

Products

Order Code Data­sheet Simu­lation Downloads Status Product seriesλDom typ.
(nm)
Emitting ColorλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chip Technology50% typ.
(°)
CVR
(V (DC))
dV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOOperating TemperaturePitch
(mm)
L
(mm)
Tol. CSizeOperating TemperatureDF
(%)
Ceramic TypeFl
(mm)
L
(µH)
IRP,40K
(A)
ISAT
(A)
fres
(MHz)
VersionVINVOut1
(V (DC))
IOut1
(A)
Type of Insulationfswitch
(kHz)
∫Udt
(Vµs)
NPRI : NSECVT
(V (RMS))
MountEndurance
(h)
IRIPPLE
(mA)
ILeak
(µA)
Ø D
(mm)
Z
(mΩ)
RESR
(Ω)
W
(mm)
H
(mm)
IR
(mA)
TiTl
(mm)
Pins (Value)
(pcs)
Z @ 100 MHz
(Ω)
Zmax
(Ω)
Test Condition ZmaxIR 2
(mA)
RDC max.
(Ω)
TypeIR
(mA)
Z @ 1 GHz
(Ω)
RowsG
(mm)
GenderPackaging Samples
150060VS55040SPEC
6 files Active i| Production is active. Expected lifetime: >10 years.WL-SMCD SMT Mono-color Chip LED Diffused 573 Bright Green 575 60 2 AlInGaP 140 1.6 0603 -40 °C up to +85 °C 0.8 0.4 Tape and Reel
742792662SPEC
9 files Active i| Production is active. Expected lifetime: >10 years.WE-CBF SMT EMI Suppression Ferrite Bead -55 °C up to +125 °C 1.6 0603 -55 °C up to +125 °C 0.3 SMT SMT 0.8 0.8 600 1000 1050 120 MHz 830 0.3 Wide Band 600 186
74279228260SPEC
9 files Active i| Production is active. Expected lifetime: >10 years.WE-MPSB EMI Multilayer Power Suppression Bead 1.6 0603 -55 °C up to +125 °C 0.3 SMT SMT 0.8 0.8 26 39 515 MHz 6500 0.008 High Current 6500 33
74279221111SPEC
9 files Active i| Production is active. Expected lifetime: >10 years.WE-MPSB EMI Multilayer Power Suppression Bead 3.2 1206 -55 °C up to +125 °C 0.5 SMT SMT 1.6 1.1 110 118 150 MHz 5400 0.015 High Current 5400 44
7447709220SPEC
8 files Active i| Production is active. Expected lifetime: >10 years.WE-PD SMT Power Inductor -40 °C up to +125 °C 12 1210 -40 °C up to +125 °C 22 7 10 Standard SMT 12 10 2 0.028 5300
860080675015SPEC
7 files Active i| Production is active. Expected lifetime: >10 years.WCAP-ATLI Aluminum Electrolytic Capacitors220 µF 50 -55 °C up to +105 °C 5 16 ±20% 8 5000 1385 110 10 Ammopack
865060653010SPEC
8 files Active i| Production is active. Expected lifetime: >10 years.WCAP-ASLL Aluminum Electrolytic Capacitors100 µF 501 MΩ -55 °C up to +105 °C 10.5 ±20% 8.0 x 10.5 -55 °C up to +105 °C 12 SMT V-Chip SMT 5000 350 50 8 340 0.227529 8.3 15" Tape & Reel
875105444004SPEC
7 files Active i| Production is active. Expected lifetime: >10 years.WCAP-PSLP Aluminum Polymer Capacitors33 µF 20 -55 °C up to +105 °C 6.6 5.8 ±20% 6.3 x 5.8 -55 °C up to +105 °C 8 V-Chip SMT 2000 2200 600 6.3 0.035 6.6 15" Tape & Reel
885012206040SPEC
8 files Active i| Production is active. Expected lifetime: >10 years.WCAP-CSGP MLCCs 16 V(DC)10 nF 1610 GΩ 1.6 ±10% 0603 -55 °C up to +125 °C 3.5 X7R Class II 0.4 0.8 0.8 7" Tape & Reel
885012206095SPEC
8 files Active i| Production is active. Expected lifetime: >10 years.WCAP-CSGP MLCCs 50 V(DC)100 nF 505 GΩ 1.6 ±10% 0603 -55 °C up to +125 °C 3 X7R Class II 0.4 0.8 0.8 7" Tape & Reel
61300411021SPEC
6 files Active i| Production is active. Expected lifetime: >10 years.WR-PHD 2.54 mm THT Angled Pin Header1000 MΩ 2.54 10.16 -40 °C up to +105 °C THT 4 Angled 3000 Single Pin Header Bag
750313638SPEC
7 files Active i| Production is active. Expected lifetime: >10 years.WE-PPTI Push-Pull Transformers -40 °C up to +125 °C; including temp rise 9.14 1209 -40 °C up to +125 °C 340 Push-Pull 5 V (DC) 5 0.65 Reinforced 300 - 620 10 1:1.3 5000 SMT 12.7 7.62 Tape and Reel
61300211121SPEC
6 files Active i| Production is active. Expected lifetime: >10 years.WR-PHD 2.54 mm THT Pin Header1000 MΩ 2.54 5.08 -40 °C up to +105 °C THT 2 Straight 3000 Single Pin Header Bag
74650073RSPEC
6 files Active i| Production is active. Expected lifetime: >10 years.WP-THRBU REDCUBE THR with internal through-hole thread -55 °C up to +150 °C THR 7 3 M3 2.5 4 50000 Tape and Reel
890303325008CSSPEC
8 files Active i| Production is active. Expected lifetime: >10 years.WCAP-FTBP Film Capacitors150 nF 630 200 0.130 GΩ -40 °C up to +105 °C 15 18 ±5% Pitch 15 mm -40 °C up to +105 °C THT 0.06122 7 13 4 Carton
750343811SPEC
4 files Active i| Production is active. Expected lifetime: >10 years. Inductor 42 Toroid -40 °C up to +125 °C 9.5 15 THT 27 42 4 Tray
750343810SPEC
4 files Active i| Production is active. Expected lifetime: >10 years. Inductor 67.5 Toroid -40 °C up to +125 °C 340 24 THT 67.5 39.88 4 Tray
Samples
Order Code Data­sheet Simu­lation Downloads Status Product seriesλDom typ.
(nm)
Emitting ColorλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chip Technology50% typ.
(°)
CVR
(V (DC))
dV/dt
(V/µs)
DF @ 1 kHz
(%)
RISOOperating TemperaturePitch
(mm)
L
(mm)
Tol. CSizeOperating TemperatureDF
(%)
Ceramic TypeFl
(mm)
L
(µH)
IRP,40K
(A)
ISAT
(A)
fres
(MHz)
VersionVINVOut1
(V (DC))
IOut1
(A)
Type of Insulationfswitch
(kHz)
∫Udt
(Vµs)
NPRI : NSECVT
(V (RMS))
MountEndurance
(h)
IRIPPLE
(mA)
ILeak
(µA)
Ø D
(mm)
Z
(mΩ)
RESR
(Ω)
W
(mm)
H
(mm)
IR
(mA)
TiTl
(mm)
Pins (Value)
(pcs)
Z @ 100 MHz
(Ω)
Zmax
(Ω)
Test Condition ZmaxIR 2
(mA)
RDC max.
(Ω)
TypeIR
(mA)
Z @ 1 GHz
(Ω)
RowsG
(mm)
GenderPackaging Samples